Plasma-enhanced chemical vapor deposition radicals

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... [Pg.234]

Dimitries Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films... [Pg.186]

Maroudas, D., Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films, in (A.K. Chakraborty, Ed.), Molecular Modeling and Theory in Chemical Engineering , vol. 28, p. 252. Academic Press, New York (2001). Maroudas, D. Multiscale modeling, Challenges for the chemical sciences in the 21st century Information and communications report , National Academies, Washington, DC. p. 133. [Pg.59]

Maroudas, D. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films. In Molecular Modeling and Theory in Chemical Engineering Chakraborty, A.K., Ed. Academic Press New York, 2001 252-296. [Pg.1725]

MODELING OF RADICAL-SURFACE INTERACTIONS IN THE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS... [Pg.252]

CVD is a well-understood thin film deposition method that uses chemical reactions of vapor-phase precursors. CVD processes have traditionally been initiated and controlled by heat as the source of energy. An elevated deposition temperature is normally required, which restricts the types of substrates that can be used and coating materials that can be deposited, especially thermally sensitive ones (Jones and Hitchman, 2009). However, thermal energy is not the only energy supplied to the system plasmas and photons are widely used in CVD processes. Plasma-enhanced chemical vapor deposition (PECVD), or plasma-assisted CVD, is a CVD technique in which plasma in lieu of thermal energy is used primarily to activate ions and radicals in the chemical reactions leading to layer formation on the substrate. One major advantage of PECVD over... [Pg.3]