Plasma-enhanced chemical vapor deposition interactions

At the end of last century, a near frictionless carbon (NFC) coating was reported, which is practically hydrogen contained DLC film grown on steel and sapphire substrates using a plasma enhanced chemical vapor deposition (PECVD) system [50]. By using a ball on a disk tribo-meter, a super low friction coefficient of 0.001-0.003 between the films coated on both the ball and the disk was achieved [50]. A mechanistic model was proposed that carbon atoms on the surface are partially di-hydrogenated, resulting in the chemical inertness of the surface. Consequently, adhesive interaction becomes weak and super low friction is achieved [22],... 

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... 

Dimitries Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films... 

Maroudas, D., Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films, in (A.K. Chakraborty, Ed.), Molecular Modeling and Theory in Chemical Engineering , vol. 28, p. 252. Academic Press, New York (2001). Maroudas, D. Multiscale modeling, Challenges for the chemical sciences in the 21st century Information and communications report , National Academies, Washington, DC. p. 133. 

Maroudas, D. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films. In Molecular Modeling and Theory in Chemical Engineering Chakraborty, A.K., Ed. Academic Press New York, 2001 252-296. 

MODELING OF RADICAL-SURFACE INTERACTIONS IN THE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS... 

Reif. R.. Plasma enhanced chemical vapor deposition of thin films for microelectronics processing. In Handbook of Plasma Processing Technology Fundamentals, Etching, Deposition, and Surface Interactions, (Rossnagel, S. M., Cuomo, J. J., and Westwood, W. D., Noyes, Eds.), Park Ridge, NJ, 1990. 

Theil, J. A., and Powell, G., The effects of He plasma interactions with SiH4 in remote plasma enhanced chemical vapor deposition. J. Appl. Phys. 75,2652-2666 (1994). 

G. Lucovsky, D.V Tsu, R.J. Markunas, Formation of thin films by remote plasma enhanced chemical vapor deposition (remote PECVD), in S.M. Rossnagel, J.J. Cuomo, W.D. Westwood (Eds.), Handbook of Plasma Processing Technology Fundamentals, Etching, Deposition and Surface Interactions, Noyes Publications, 1990, Chapter 16. 

---