Plasma-enhanced chemical vapor surface

At the end of last century, a near frictionless carbon (NFC) coating was reported, which is practically hydrogen contained DLC film grown on steel and sapphire substrates using a plasma enhanced chemical vapor deposition (PECVD) system [50]. By using a ball on a disk tribo-meter, a super low friction coefficient of 0.001-0.003 between the films coated on both the ball and the disk was achieved [50]. A mechanistic model was proposed that carbon atoms on the surface are partially di-hydrogenated, resulting in the chemical inertness of the surface. Consequently, adhesive interaction becomes weak and super low friction is achieved [22],... 

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... 

Dimitries Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films... 

In chemical vapor deposition (CVD) complex shaped surfaces can be coated with homogeneous layers, especially when carried out at low pressure (LPCVD, low pressure chemical vapor deposition) (review Ref. [410]). A gas reacts with the heated substrate surface to give a solid coating and gaseous by-products which have to be removed continously. Layer thicknesses created by chemical vapor deposition are usually in the order 5-10 pm.. In cases where it is necessary to keep the temperature low, a plasma can stimulate the surface reaction in plasma enhanced chemical vapor deposition (PECVD). 

Maroudas, D., Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films, in (A.K. Chakraborty, Ed.), Molecular Modeling and Theory in Chemical Engineering , vol. 28, p. 252. Academic Press, New York (2001). Maroudas, D. Multiscale modeling, Challenges for the chemical sciences in the 21st century Information and communications report , National Academies, Washington, DC. p. 133. 

Maroudas, D. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films. In Molecular Modeling and Theory in Chemical Engineering Chakraborty, A.K., Ed. Academic Press New York, 2001 252-296. 

MODELING OF RADICAL-SURFACE INTERACTIONS IN THE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS... 

Reif. R.. Plasma enhanced chemical vapor deposition of thin films for microelectronics processing. In Handbook of Plasma Processing Technology Fundamentals, Etching, Deposition, and Surface Interactions, (Rossnagel, S. M., Cuomo, J. J., and Westwood, W. D., Noyes, Eds.), Park Ridge, NJ, 1990. 

Plasmas are used in three major microelectronics processes sputtering, plasma enhanced chemical vapor deposition (PECVD), and plasma etching. In each, the plasma is used as a source of ions and/or reactive neutrals and is sustained in a reactor so as to control the flux of neutrals and ions to a surface. The typical ranges of properties for a glow discharge used in microelectronic fabrication are as shown in Table I. 

For all samples, ohmic contacts were formed by lift-off of e-beam deposited Ti (200 A)/A1 (1000 A)/Ni (400 A)/Au (1200 A) subsequently annealed at 850°C for 45 s under a flowing N2 ambient. The surface was encapsulated with 2000 A of plasma enhanced chemical vapor deposited SiNx at SOO C. Windows in the SiN were opened by dry etching and 100 A of Pt deposited by e-beam evaporation for Schottky contacts. The final metal was e-beam deposited Ti/Au (200 A/1200 A) interconnection contacts. Figure 5.20 presents a diagram of the structure of the device and a bird s-eye view. 

The attractive electronic properties of Cu on PTFE have been a major driving force for the considerable effort directed towards deveioproent of alternative meihods of producing patterned Cu films on PTFE. These approaches include ion plating, presputteting plasma-enhanced chemical vapor deposition (CVD), and heavy ion irradiation. In contrast to these methods, where relatively large radiation doses arc used to directly prepare PTFE surfaces for Cu adhesion, we have developed a family of three-step process for direct formation of patterned copper on PTFE. In (he following we will consider the steps involved in these Cu deposition processes. 

Si02 surface modified Nafion membranes could be prepared by in situ surfactant-templated sol-gel reaction [38] or by plasma enhanced chemical vapor deposition [45]. Ti02-coated Nafion membranes were prepared by dip coating from a titania sol [85]. 

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