Nitrides plasma-enhanced chemical vapor

Marks, J., Witty, D., Short, A., Laford, W., and Nguyen, B., Properties of High Quality Nitride Films by Plasma Enhanced Chemical Vapor Deposition, Proc. 11th. Int. Conf. on CVD, (K. Spear and G. Cullen, eds.), pp. 368-373, Electrochem. Soc., Pennington, NJ 08534 (1990)... 

Tsu, D. V., and Lucovsky, G., Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition, J. Vac. Set. Technol. A, 4(3-1 ) 480-485 (May-June 1986)... 

The other platform is dielectrics, for example, silicon dioxide, silicon nitride, silicon oxynitride, tantalum pentoxide, and titanium dioxide. They can be deposited by various methods, such as plasma-enhanced chemical vapor deposition, thermal evaporation, electron-beam evaporation, and sputtering. There are a number of dielectrics with refractive indices ranging from 1.45 to 2.4, facilitating diverse waveguide designs to satisfy different specification. Dielectrics have two other... 

A.K. Stamper and S.L. Pennington. Characterization of Plasma-Enhanced Chemical Vapor Deposited Nitride Films Used in Very Large Scale Integrated Apphcations , Journal of... 

The steam reformer is a serpentine channel with a channel width of 1000 fim and depth of 230 fim (Figure 15). Four reformers were fabricated per single 100 mm silicon wafer polished on both sides. In the procedure employed to fabricate the reactors, plasma enhanced chemical vapor deposition (PECVD) was used to deposit silicon nitride, an etch stop for a silicon wet etch later in the process, on both sides of the wafer. Next, the desired pattern was transferred to the back of the wafer using photolithography, and the silicon nitride was plasma etched. Potassium hydroxide was then used to etch the exposed silicon to the desired depth. Copper, approximately 33 nm thick, which was used as the reforming catalyst, was then deposited by sputter deposition. The reactor inlet was made by etching a 1 mm hole into the end... 

Ma, Y., Yasuda, T. and Lucovsky, G. Fixed and trapped charges at oxide-nitride-oxide heterostructure interfaces formed by remote plasma-enhanced chemical-vapor-deposition. Journal of Vacuum Science Technology 11, 1533-1540 (1993). 

Passivation is needed to insulate the backplane from the OLED stacks everywhere except the ITO and bonding contact areas. Unlike poly-Si and a-Si H backplanes, on which both organic and inorganic passivation layers can easily work, the device passivation technique needs extra consideration for pentacene TFTs. We explored several different materials for passivation of pentacene TFTs, including poly(vinyl alcohol) (PVA), room temperature plasma-enhanced chemical vapor deposition silicon nitride (RT PECVD SiN), and vapor-deposited parylene. 

Guo, L. and Singh, R. N. Selective growth of boron nitride nanotubes by plasma-enhanced chemical vapor deposition at low substrate temperature. Nanotechnology, 2008,19,065601(1—6). 

To work around the above-mentioned drawbacks issued by thermally grown Si02, the group at Penn State University made use of ion-beam sputtered silicon oxide. The process can be conducted at temperatures compatible with organic materials (80°C) and can be carried out on flexible substrates [29], An alternative low temperature technique is plasma enhanced chemical vapor deposition (PECVD), which has been put into practice with silicon nitride by several groups [30,31]. 

In a plasma-enhanced chemical vapor deposition (PECVD) process, a substrate is exposed to one or more volatile precursors whose atoms or molecules react and/or decompose on the substrate surface, typically using hydrogen in a thermal activation to produce the required deposition. Compounds, such as oxides and nitrides, are produced in reaction with the plasma gas species, usually at lower temperature. A plasma polymerization can occur on a surface when a precursor vapor is not completely decomposed within the plasma. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

Ullrafine particles (UFPs) of metal and semiconductor nitrides have been synthesized by two major techniques one is the reactive gas condensation method, and the other is the chemical vapor condensation method. The former is modified from the so-called gas condensation method (or gas-evaporation method) (13), and a surrounding gas such as N2 or NII2 is used in the evaporation chamber instead of inert gases. Plasma generation has been widely adopted in order to enhance the nitridation in the particle formation process. The latter is based on the decomposition and the subsequent chemical reaction of metal chloride, carbonate, hydride, and organics used as raw materials in an appropriate reactive gas under an energetic environment formed mainly by thermal healing, radiofrequency (RF) plasma, and laser beam. Synthesis techniques are listed for every heal source for the reactive gas condensation method and for the chemical vapor condensation method in Tables 8.1.1 and 8.1.2, respectively. 

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