Radical-surface interactions

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... 

Dimitries Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films... 

These results led the workers to suggest that catalysis actually leads to the removal of surface nickel atoms, primarily due to local heating which takes place at the reaction site. Furthermore, during the catalytic process, the nickel atom is temporarily part of a liquid- or gas-phase intermediate. Once the catalytic process is complete, the authors postulated that the free nickel atom readsorbed onto the bulk nickel, adsorbed onto the inert support, remained as nickel sol in the liquid, or continued to act as a catalyst. It was claimed that this model explained several observations, such as the differences between unsupported and supported nickel. The supported metal has a greater surface area upon which the metal can readsorb, so it tends to leave fewer atoms in the product liquid. The model also explains the observation that the reaction vessel became coated with a thin film of nickel after lengthy use. This postulated etching mechanism is similar to the recent model discussed above, whereby etching results from free-radical-surface interactions. 

Maroudas, D., Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films, in (A.K. Chakraborty, Ed.), Molecular Modeling and Theory in Chemical Engineering , vol. 28, p. 252. Academic Press, New York (2001). Maroudas, D. Multiscale modeling, Challenges for the chemical sciences in the 21st century Information and communications report , National Academies, Washington, DC. p. 133. 

Maroudas, D. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films. In Molecular Modeling and Theory in Chemical Engineering Chakraborty, A.K., Ed. Academic Press New York, 2001 252-296. 

MODELING OF RADICAL-SURFACE INTERACTIONS IN THE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS... 

Ramalingam, S., Maroudas, D., and Aydil, E. S., Visualizing radical-surface interactions in plasma deposition processes Reactivity of SiHs radicals with Si surfaces. IEEE Trans. Plasma Sci. 27,104-105 (1999a). 

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