Radio frequency plasma-enhanced chemical

The radio-frequency glow-discharge method [30-34] has been the most used method in the study of a-C H films. In this chapter, it is referred to as RFPECVD (radio frequency plasma enhanced chemical vapor deposition). Film deposition by RFPECVD is usually performed in a parallel-plate reactor, as shown in Figure 1. The plasma discharge is established between an RF-powered electrode and the other one, which is maintained at ground potential. The hydrocarbon gas or vapor is fed at a controlled flow to the reactor, which is previously evacuated to background pressures below lO"" Torr. The RF power is fed to the substrate electrode... 

Figure 1.8a showed a scheme of the CNTs NO2 sensor layout for NO2 detection with limits as low as 10 ppb [108], It was prepared by a radio frequency plasma enhanced chemical vapour deposition (r.f. PECVD) on Si/Si3N4 substrates. The thin film (5 nm) of Ni catalyst was deposited onto Si3N4/Si substrates provided with platinum interdigital electrodes and a back-deposited thin-film platinum heater... 

Ho GW, Wee ATS, Lin J, Tjiu WC. Synthesis of well-aligned multiwalled carbon nanotubes on Ni catalyst using radio frequency plasma-enhanced chemical vapor deposition. Thin Solid Films 2001 388 73-7. 

Woo Y, Kim DC, Jeon DY, Chung HJ, Shin SM, Li XS, et al. Large-grained and highly-ordered graphene synthesized by radio frequency plasma-enhanced chemical vapor deposition. Elec SocT 2009 19 111-4. 

Thin hexafluoropropylene (HFP) films were deposited applying different reactor conditions by a radio frequency plasma enhanced chemical vapor deposition process onto photolithographic masked silicon surfaces, (a) depicts the crosslink density calculated from ESCA experiments (28). (b) shows the normalized amplitude response. The difference between silicon and HFP response was measured from recorded images allowing for an accurate statistical averaging, and converted into the difference in contact stiffness ks. The SFM measurements were carried in a nitrogen atmosphere (humidity < 4 %) at room temperature. Scan speed was 50 jjm/s, applied lateral modulation amplitude 3.5 nm, and modulation frequency 13 kHz. No external load was applied to the cantilever. 

Deposition and Diffusion of Platinum Nanojjarticles in Porous Carbon Assisted by Plasma Sputtering. Surf. Coat. Technol., Vol. 200, p>p. 391-394 Caillard, A. Charles, C. Ramdutt, D. Boswell, R. Brault, P. (2009). Effect of Nafion and Platinum Content in a Catalyst Layer Processed in a Radio Frequency Helicon Plasma System. /. Phi/s. D Appl. Phys., Vol. 42, No. 045207 Cao, Y. Yang, W. Zhang, W. Liu, G. Yue, P. (2004). Improved Photocatalytic Activity of Sn4+ Dop>ed Ti02 Nanoparticulate Films Preprared by Plasma-Enhanced Chemical Vapor Deposition. New. J. Chem., Vol. 28, pp. 218-222 Carlson, D.E. Wronski, C.R. (1976). Amorphous SiUcon Solar Cell. Appl. Phys. Lett., Vol. 28, pp. 671-673... 

Mueller, T. (2009). Heterojunction Solar Cells (a-Si/c-Si), Logos, ISBN 978-3-8325-2291-9, Berlin Nakamura, M. Aoki, T. Hatanaka, Y. Korzec, D. Engemann, J. (2001). Comp>arison of Hydrophilic Properties of Amorphous TiOx Films Obtained by Radio Frequency Sputtering and Plasma-Enhanced Chemical Vapor Deposition. /. Mater. Res., Vol. 

Figure 1.2 Parallel Plate Plasma-Enhanced Chemical Vapor Deposition (PECVD) Reactor. Typical Parameters are Radio Frequency (rf) - 50 kHz to 13.56 MHz Temperature - 25 to 700°C Pressure - lOOmTorr to 2Torr Gas Flowrate - 200seem...

Plasmas can be used in CVD reactors to activate and partially decompose the precursor species and perhaps form new chemical species. This allows deposition at a temperature lower than thermal CVD. The process is called plasma-enhanced CVD (PECVD) (12). The plasmas are generated by direct-current, radio-frequency (r-f), or electron-cyclotron-resonance (ECR) techniques. Eigure 15 shows a parallel-plate CVD reactor that uses r-f power to generate the plasma. This type of PECVD reactor is in common use in the semiconductor industry to deposit siUcon nitride, Si N and glass (PSG) encapsulating layers a few micrometers-thick at deposition rates of 5—100 nm /min. 

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