Photoresists novolac

Research has also been aimed at the development of more-transparent base-soluble matrix resins. For example, novolacs prepared from pure p-cresol absorb less strongly at 250 nm than do typical photoresist novolacs containing a mixture of cresol isomers. Unfortunately, p-cresol novolac is only sparingly soluble in aqueous base and has limited usefulness (28, 57). Other examples of more-transparent matrix resins include poly(dimethyl glutarimide) (PMGI) (58) and copolymers of methyl methacrylate (MMA) and methacrylic acid (MAA) [P(MMA-MAA)]. 

Novolac- or phenolic resin-based resists usually show no pattern deformation induced by swelling during development in aqueous alkaline solution. Examples of such resists are naphtho-quinonediazide/novolac positive photoresists, novolac-based positive electron-beam resist (NPR) (1), and azide/phenolic negative deep-UV resist (MRS) (2). Iwayanagi et al.(2) reported that the development of MRS proceeds in the same manner as the etching process. This resist, consisting of a deep-UV sensitive azide and phenolic resis matrix, is also sensitive to electron-beams. This paper deals with the development mechanism of non-swelling MRS and its electron-beam exposure characteristics. 

Typical resists include cyclized polyisoprene with a photosensitive crosslinking agent (ex bisazide) used in many negative photoresists, novolac resins with diazoquinone sensitizers and imidazole catalysts for positive photoresists, poly(oxystyrenes) with photosensitizers for UV resists, polysilanes for UV and X-ray resists, and polymethacrylates and methacrylate-styrenes for electron-beam resists (Clegg and Collyer, 1991). Also note the more recent use of novolac/diazonaphthoquinone photoresists for mid-UV resists for DRAM memory chips and chemically amplified photoacid-catalysed hydroxystyrene and acrylic resists for deep-UV lithography (Choudhury, 1997). 

L First manufacturing use of chemically amplified resists Plasma-developed resist first described X-ray proximity lithography demonstrated Bis-azide rubber resists introduced DNO-novolac resist for microelectronics introduced Photoresist technology first applied to transistor fabrication DNO-novolac resist patented by Kalle... 

Positive-Tone Photoresists based on Dissolution Inhibition by Diazonaphthoquinones. The intrinsic limitations of bis-azide—cycHzed mbber resist systems led the semiconductor industry to shift to a class of imaging materials based on diazonaphthoquinone (DNQ) photosensitizers. Both the chemistry and the imaging mechanism of these resists (Fig. 10) differ in fundamental ways from those described thus far (23). The DNQ acts as a dissolution inhibitor for the matrix resin, a low molecular weight condensation product of formaldehyde and cresol isomers known as novolac (24). The phenoHc stmcture renders the novolac polymer weakly acidic, and readily soluble in aqueous alkaline solutions. In admixture with an appropriate DNQ the polymer s dissolution rate is sharply decreased. Photolysis causes the DNQ to undergo a multistep reaction sequence, ultimately forming a base-soluble carboxyHc acid which does not inhibit film dissolution. Immersion of a pattemwise-exposed film of the resist in an aqueous solution of hydroxide ion leads to rapid dissolution of the exposed areas and only very slow dissolution of unexposed regions. In contrast with crosslinking resists, the film solubiHty is controUed by chemical and polarity differences rather than molecular size. 

I ovolac Synthesis and Properties. Novolac resins used in DNQ-based photoresists are the most complex, the best-studied, the most highly engineered, and the most widely used polymers in microlithography. Novolacs are condensation products of phenoHc monomers (typically cresols or other alkylated phenols) and formaldehyde, formed under acid catalysis. Figure 13 shows the polymerization chemistry and polymer stmcture formed in the step growth polymerization (31) of novolac resins. 

Many applications of novolacs are found in the electronics industry. Examples include microchip module packaging, circuit board adhesives, and photoresists for microchip etching. These applications are very sensitive to trace metal contamination. Therefore the applicable novolacs have stringent metal-content specifications, often in the low ppb range. Low level restrictions may also be applied to free phenol, acid, moisture, and other monomers. There is often a strong interaction between the monomers and catalysts chosen and attainment of low metals levels. These requirements, in combination with the high temperature requirements mentioned above, often dictate special materials be used for reactor vessel construction. Whereas many resoles can be processed in mild steel reactors, novolacs require special alloys (e.g. Inconel ), titanium, or glass for contact surfaces. These materials are very expensive and most have associated maintenance problems as well. 

Figure 10. Submicron features generated by e-beam imaging of 0.14 ftm of an aliphatic polysilane over 2.0 ftm of hardbaked Novolac-naphthoquinone-2-diazide photoresist 20 ftC, Oj-RIE image transfer.

DNOC (4,6-dinitro-o-cresol), 13 283 14 349 DNQ-novolac photoresist film, optical absorption spectrum of, 15 163-164 DNQ-novolac resists, 15 162... 

While "conventional positive photoresists" are sensitive, high-resolution materials, they are essentially opaque to radiation below 300 nm. This has led researchers to examine alternate chemistry for deep-UV applications. Examples of deep-UV sensitive dissolution inhibitors include aliphatic diazoketones (61-64) and nitrobenzyl esters (65). Certain onium salts have also recently been shown to be effective inhibitors for phenolic resins (66). A novel e-beam sensitive dissolution inhibition resist was designed by Bowden, et al a (67) based on the use of a novolac resin with a poly(olefin sulfone) dissolution inhibitor. The aqueous, base-soluble novolac is rendered less soluble via addition of -10 wt % poly(2-methyl pentene-1 sulfone)(PMPS). Irradiation causes main chain scission of PMPS followed by depolymerization to volatile monomers (68). The dissolution inhibitor is thus effectively "vaporized", restoring solubility in aqueous base to the irradiated portions of the resist. Alternate resist systems based on this chemistry have also been reported (69,70). 

Etching resistance = novolac based positive photoresists... 

The incorporation of PDMSX into conventional novolac resins has produced potential bilevel resist materials. Adequate silicon contents necessary for O2 RIE resistance can be achieved without sacrificing aqueous TMAH solubility. Positive resist formulations using an o-cresol novolac-PDMSX (510 g/mole) copolymer with a diazonaphthoquinone dissolution inhibitor have demonstrated a resolution of coded 0.5 pm L/S patterns at a dose of 156 mJ/cm2 upon deep-UV irradiation. A 1 18 O2 etching selectivity versus hard-baked photoresist allows dry pattern transfer into the bilevel structure. 

HPR-206 Positive Photoresist (Olin-Hunt) Mixed Isomer Novolac + Diazonaphthoquinone Photoactive Compounds 120-140... 

Table IV lists the planarization of 20 - 400 [im wide holes achieved by unbaked and baked films of positive photoresist, ortho-cresol novolac and poly(o>-methylstyrene).

Novolac resins, as the oldest synthetic polymers, have played an important role 1n microelectronic Industry as positive photoresists. Studies of novolac dissolution have populated the literature a recent survey shows that the rate of dissolution 1s influenced by the concentration of the alkali, size of the cation, addition of salt, and the presence of dissolution Inhibitors (1-6). The voluminous experimental results, however, have not led to a clear understanding of the dissolution phenomena. Arcus (3) proposed an 1on-permeab1e membrane" model while Szmanda (1) and Hanabata (6) emphasized the Importance of secondary structures of novolac molecules, for Instance, Inter- or Intramolecular hydrogen bonding and the various isomeric configurations of the resins. These important contributions nevertheless point to a need for additional studies of the mechanism of dissolution. 

The workhorse of the VLSI industry today is a composite novolac-diazonaphthoquinone photoresist that evolved from similar materials developed for the manufacture of photoplates used in the printing industry in the early 1900 s (23). The novolac matrix resin is a condensation polymer of a substituted phenol and formaldehyde that is rendered insoluble in aqueous base through addition of 10-20 wt% of a diazonaphthoquinone photoactive dissolution inhibitor (PAC). Upon irradiation, the PAC undergoes a Wolff rearrangement followed by hydrolysis to afford a base-soluble indene carboxylic acid. This reaction renders the exposed regions of the composite films soluble in aqueous base, and allows image formation. A schematic representation of the chemistry of this solution inhibition resist is shown in Figure 6. 

Interest in solution inhibition resist systems is not limited to photoresist technology. Systems that are sensitive to electron-beam irradiation have also been of active interest. While conventional positive photoresists may be used for e-beam applications (31,32), they exhibit poor sensitivity and alternatives are desirable. Bowden, et al, at AT T Bell Laboratories, developed a novel, novolac-poly(2-methyl-l-pentene sulfone) (PMPS) composite resist, NPR (Figure 9) (33,34). PMPS, which acts as a dissolution inhibitor for the novolac resin, undergoes spontaneous depolymerization upon irradiation (35). Subsequent vaporization facilitates aqueous base removal of the exposed regions. Resist systems based on this chemistry have also been reported by other workers (36,37). 

The positive resist materials evolved from discoveries made by the Kalle Corporation in Germany who developed the first positive-acting photoresist based on the use of a novolac matrix resin and a diazoquinone photoactive compound or sensitizer. The original materials were designed to produce photoplates used in the printing industry. These same materials have been adopted by semi-conductor fabrication engineers and continue to function effectively in that more demanding application. 

Positive photoresist formulations consist of a novolac resin and an appropriate diazonaphthoquinone dissolved in organic solvent. Common solvents include ethyl cellosolve acetate, diglyme, etc. These formulations are spin-coated and then baked to remove the coating solvent. They provide films in which the sensitizer is randomly distributed through the novolac matrix. 

Figure 19 shows the ultraviolet absorption spectrum of a typical diazonaphthoquinone and a common novolac resin. The naphthoquinone sensitizer has a strong absorbance at the 365 nm., 405 nm., and to a lesser extent the 436 nm. mercury emission lines. There are two diazonaphthoquinone isomers that are used in commercial photoresist formulations that are available at this time. The 5-arylsulfonates are by far the most commonly used. A spectrum of a representative of this class of materials is depicted in Figure 20. The 5-arylsulfonate materials are characterized by an absorbance maximum at approximately 400 nm. and a second, slightly stronger maximum at approximately 340 nm.

---