Photoresist negative

A number of polymers are capable of fulfilling these demanding requirements. Typically negative photoresists are based on cyclised poly(l,4-isoprene). These polymers are prepared by dissolving poly(l,4-isoprene) in an appropriate solvent and subjecting it to thermal degradation. This is followed by treatment with acid to produce the cyclised material (see Reaction 8.8). 

An image is formed on the surface using hard-UV or soft x-rays. If the polymer is a photoresist, it cross-links in those areas exposed to radiation. If the polymer is a negative photoresist, it degrades in those areas exposed to radiation. 

Hence, Tct is seen to increase with pore density and pore radius. However, a problem appears at a porous substrate when thin films are to be deposited during metallization to form interconnections, thin-film capacitors, etc.335 Sputtered material falls deep into the pores, which affects the planarity of the deposited layer and the electrical resistivity of the oxide layer underneath.335 To cope with this effect, the porous oxide should be padded by inorganic (A1203 and Si02) or organic (polyimide, negative photoresist) layers. 

Polymethacrylates containing 6-cyanouracil or 5-bromouracil units in the side chain of the polymer displayed the highest photosensitivity. Copolymers of butadiene with the methacrylate monomer with pendant 6-cyanouracil are capable of resolving 1 o features and behaved as negative photoresists. 

The first modern day negative photoresists were developed by the Eastman Kodak Company which utilized cyclized rubbers and cinnamic acid derivatives as photosensitive crosslinking agents (42). The first commercially important photoresist based on this chemistry was known as KPR, which was of a cinnamate ester of polyvinyl alcohol. It was introduced by Kodak in 1954. 

The most familiar negative photoresists are examples of two-component, resist materials. These include Kodak s KTFR, Merck s Selectilux N, Hunt s HNR, etc., all of which consist of a cyclized synthetic rubber matrix resin which is radiation insensitive but forms excellent films. This resin is combined with a bis-arylazide sensitizer. 

Experimental methods for determining 0 are well documented (2). These experiments are conveniently carried out and require only a method of producing reasonably narrow-bandwidth radiation, a method of measuring the flux of that radiation per unit area, and a UV-visible spectrophotometer. The quantum efficiency of typical diazonaphthoquinone sensitizers of the type that are used in the formulation of positive photoresists ranges from 0.2 to 0.3, whereas the quantum efficiency of the bis-arylazide sensitizers used in the formulation of two-component negative photoresists, ranges from 0.5 to 1.0. 

Negative photoresists are formed from polymers that undergo reactions that decrease their solubility when exposed to radiation. Thus, polymers such as cA-l,4-polyisoprene (Equation 6.63) cross-link when exposed to the appropriate radiation giving insoluble products. 

It is necessary to prebake the PI film to 200°C to improve its resistance towards negative photoresist with a commercial stripper. After baking, remove the photoresist with a commercial stripper which is usually composed of phenol, strong mineral acids and solvents. 11) Neutralization and rinse. 12) final cure. Typical schedules are 30 min. at 350°C or 15 min. at 400°C. 10)PIasma,chemically etching) or physically (roughening) treat the polyimide surface to improve adhesion for next level metal. 

Curing is first performed at 200 C in air and then at 350 C in a nitrogen atmosphere. Through-holes are etched using a negative photoresist as the etching mask and an etchant containing hydrazine hydrate and ethylenediamine. Next, the second level metallization is formed. PIQ film is then formed on the second level metallization. This acts as a passivation film. 

During the component fabrication process, CFC-113 and TCA are widely nsed for cleaning surfaces and for stripping negative photoresist. Nonhalogenated solvents are often nsed for stripping positive resist. Following fabrication, the chips are tested for defects and the wafers cnt into individual chips. 

Ethylbenzene is also used as a negative photoresist solvent in the semiconductor industry (Ladou Rohm, 1998) and as a general solvent and diluent (Angerer et al., 1994). 

Figure 9. Photochemical transformations of a bisazide sensitizer in negative photoresists based on cyclized polyisoprene.

ODUR-110-WR, but no detailed lithographic evaluation has been published. Since the matrix resin is cyclized rubber, one would expect the same swelling limitation on resolution evident in conventional negative photoresists. 

A photoresist can be either a positive or negative type. Mostly, in negative photoresists, areas that are exposed to the activating radi-... 

Figure 11.4 Schematic representation of the photolithographic process sequence, for both positive and negative photoresists. [Adapted from Ref. 70.]...

The resists employed for wet etching adhesion experiments were typical commercially available azide initiated/cyclized isoprene type negative photoresists. 

Direct Patterning of Photosensitive Polyimides. Photosensitive polyi-mides (PSPIs) are recently developed materials that can be directly photo-patterned like a negative photoresist (80,85,88,146-148). The most common PSPIs are polyamic acids that have been esterified with photoreactive alcohols and combined with photoinitiators to form a polymer that will crosslink under exposure to UV radiation and become insoluble. The unexposed material is selectively dissolved in a developer solution, and the patterned film is then cured to convert the cross-linked polyamic acid to a polyimide and drive off the cross-linking groups. 

Although most photoresists are generally considered to be sacrificial materials, liquid-type negative photoresists, such as SU-8, can be used to create microchannels within microfluidic chips [20]. The photoresist then becomes a structural material, in such a way that its thickness determines the depth of the microchannel. A negative dry photoresist... 

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