Resist materials positive

No materials have properties that fulfill all requirements. For example, good heat conductivity is a desirable property for the fabrication of heat exchanger surfaces, but not for insulation purposes. Obviously, both positive and negative properties can coexist in a single material. A corrosion resistant material may be insufficient for heat resistance or mechanical strength. Strong materials may be too brittle, e.g., ferrosilicon. Also, materials that have good mechanical and chemical properties may be too expensive. 

This technique is used to transfer a computer-generated pattern onto a substrate. Here, a film of photoresist is spin-coated onto the substrate and exposed to UV light through a photolithographic mask the light exposure transfers the desired pattern to the photoresist. Depending on whether the resist material is positive or negative , the photoresist... 

The structures of the dimethylsiloxane block copolymers and respective parent homopolymers prepared for use as positive, bilevel resist materials are shown in Figure 1. Most copolymers were synthesized with >10 wt % silicon. The selection of PDMSX block length and novolac chemical composition proved to be the two most critical variables in achieving adequate resolution. 

The incorporation of PDMSX into conventional novolac resins has produced potential bilevel resist materials. Adequate silicon contents necessary for O2 RIE resistance can be achieved without sacrificing aqueous TMAH solubility. Positive resist formulations using an o-cresol novolac-PDMSX (510 g/mole) copolymer with a diazonaphthoquinone dissolution inhibitor have demonstrated a resolution of coded 0.5 pm L/S patterns at a dose of 156 mJ/cm2 upon deep-UV irradiation. A 1 18 O2 etching selectivity versus hard-baked photoresist allows dry pattern transfer into the bilevel structure. 

The photoresponsive properties of molecular glasses also have been applied in the design of resists for semiconductor lithography. In a resist, irradiation changes the solubility of the materials, making it more or less soluble (positive or negative resist, respectively). The search for new resist materials follows the development of lithographic techniques toward deep-UV and electron beam... 

Resist materials can be classified as positive or negative on the basis of their radiation response as described in Section 3.1 and illustrated in Figure 1. Both resist types can be subdivided into two categories depending upon the basic nature of their design 1) one-component systems and 2) two-component systems (see Figure 2). One-component systems are polymers that combine radiochemical reactivity with etch resistance and film-forming characteristics. In two component systems, the resist is formulated from an... 

The positive resist materials evolved from discoveries made by the Kalle Corporation in Germany who developed the first positive-acting photoresist based on the use of a novolac matrix resin and a diazoquinone photoactive compound or sensitizer. The original materials were designed to produce photoplates used in the printing industry. These same materials have been adopted by semi-conductor fabrication engineers and continue to function effectively in that more demanding application. 

The latest addition to this list of dry developing resist materials is a contribution from IBM s San Jose Research Laboratory (66-67) that evolved from efforts to design positive-tone resist materials that incorporate chemical amplification. These efforts were stimulated by the fact that the quantum yield of typical diazoquinones of the sort used in the formulation of positive photoresists is 0.2 to 0.3 thus, three or four photons are required to transform a single molecule of sensitizer. This places a fundamental limit on the photo-sensitivity of such systems. 

The earliest work in DUV lithography utilized PMMA resist (77) and required exposure times of tens of minutes. Researchers were forced to tolerate the excessive exposure times because conventional, positive NUV resists are not useful for DUV exposure. These NUV resist materials (the... 

Attempts to improve the DUV sensitivity of PMMA have spawned a variety of new DUV resist materials. Notable among these are copolymers of methyl methacrylate and indenone (80) which are reported to provide positive-tone resist function at 20 to 60 mJicnP in the DUV and copolymers of methyl methacrylate and 3-oximino-2-butanone (81). The latter materials provide a substantial increase in sensitivity over PMMA and are capable of 1 micron resolution. 

These results confirm the potential of poly (p-formyloxystyrene) as a useful resist material combining such interesting properties as ability to be imaged in both positive or negative tone, ease of preparation, and activity in the deep UV, with a moderate sensitivity and good contrast. 

The LDPE production with tubular reactors (see Section 5.1) requires some sophisticated control valves [45]. The let-down valve (Fig. 4.2-6 B) controls the polymerization reaction via the pressure and temperature by a high-speed hydraulic actuator (9) together with an electronic hydraulic transducer. The position of the valve relative to the stem is determined by a high-resolution electronic positioner (7). The cone-shaped end of the valve stem (2), as well as the shrunk valve seat (3) are made from wear-resistant materials (e.g., sintered tungsten carbide) in order to tolerate the high differential pressure of around 3000 bar during the expansion of the polymer at that location. 

Deep-W Lithography. The important issues for deep-UV lithography (200-250 nm) are aligner optics and resist materials. Problems in aligner optics stem from the decreased transparency of standard lens materials in this frequency range, which necessitates the use of more-expensive construction materials such as quartz. Typical near-UV positive resists are not useful for deep-UV lithography because of unacceptable absorption at... 

Several groups have investigated three-component systems encompassing both chemical amplification and dissolution inhibition. As stated earlier, Smith and Bonham (63) reported resist materials composed of a binder resin (novolac), a nonpolymeric compound containing acid-labile functional groups such as acetals, and a trihalomethyl-substituted 5-triazine acid photogenerator. The acid-labile compound acts as a novolac dissolution inhibitor in a manner analogous to the action of DNQ in conventional positive resists. However, in this case, the inhibitor is not photochemically active. Instead,... 

One final example of the application of onium salt photochemistry in positive resist materials should be mentioned, because it does not include any postexposure acid-catalyzed processes and therefore does not encompass the principle of chemical amplification (79). Interestingly, Newman (79) has determined that onium salts themselves can inhibit the dissolution of novolac in aqueous base and that irradiation of such an onium salt-novolac resist restores the solubility of the resin in developer and leads to a positive-tone image. In this application, the onium salt behaves like diazonaphthoquinone in a typical positive resist. Recently, Ito (80) has reported also the use of onium salts as novolac dissolution inhibitors. 

Figure 4.25 Extraction of one-dimensional position information from a channelplate detector by using a continuous resistive strip anode. If an electron avalanche (shaded circular area) hits the resistive material of the anode, the charges Qt and Q2, collected on the electrical contacts (shaped rectangular areas), are proportional to the distances (P, L)...

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