Etching resistance

Incorporation of cyclic aliphatic (aUcycHc) side groups markedly improves the plasma etch resistance of acryhc polymers, without reduciag optical transparency at 193 nm (91). Figure 32 presents stmctures of some acryhc polymers currendy under study for use ia 193-nm CA resists (92—94). Recendy, polymers with main-chain aUcycHc stmctures have been described that offer similar properties (95,96). 

These processes are considerably more complex in actual CMOS fabrication. First, the lower layers of a CMOS stmcture typically have a twin-tub design which includes both PMOS and NMOS devices adjacent to each other (see Fig. 3b). After step 1, a mask is opened such that a wide area is implanted to form the -weU, followed by a similar procedure to create the -weU. Isolation between active areas is commonly provided by local oxidation of sihcon (LOCOS), which creates a thick field oxide. A narrow strip of lightly doped drain (LDD) is formed under the edges of the gate to prevent hot-carrier induced instabiUties. Passivation sidewalls are used as etch resists. A complete sequence of fabrication from wafer to packaged unit is shown in Figure 10. 

Cadmium usage, illegal in most of Europe, is being discouraged elsewhere. The U.S. military has cadmium specifications for electronic, fastener, and marine equipment, which requires only cadmium. Tin is being substituted for tin—lead as a metallic etch resist during printed circuit board production. 

Iron carbide (3 1), Fe C mol wt 179.56 carbon 6.69 wt % density 7.64 g/cm mp 1650°C is obtained from high carbon iron melts as a dark gray air-sensitive powder by anodic isolation with hydrochloric acid. In the microstmcture of steels, cementite appears in the form of etch-resistant grain borders, needles, or lamellae. Fe C powder cannot be sintered with binder metals to produce cemented carbides because Fe C reacts with the binder phase. The hard components in alloy steels, such as chromium steels, are double carbides of the formulas (Cr,Fe)23Cg, (Fe,Cr)2C3, or (Fe,Cr)3C2, that derive from the binary chromium carbides, and can also contain tungsten or molybdenum. These double carbides are related to Tj-carbides, ternary compounds of the general formula M M C where M = iron metal M = refractory transition metal. 

SemiadditiveMethod. The semiadditive method was developed to reduce copper waste. Thin 5.0 lm (4.5 mg/cm ) copper foil laminates are used, or the whole surface may be plated with a thin layer of electroless copper. Hole forming, catalysis, and electroless copper plating are done as for subtractive circuitry. A strippable reverse—resist coating is then appHed. Copper is electroplated to 35 p.m or more, followed by tin or tin—lead plating to serve as an etch resist. The resist is removed, and the whole board is etched. The original thin copper layer is quickly removed to leave the desired circuit. This method wastes less than 10% of the copper. 

Tin—Nickel. AHoy deposits having 65% fin have been commercially plated siace about 1951 (135). The 65% fin alloy exhibits good resistance to chemical attack, staining, and atmospheric corrosion, especially when plated copper or bron2e undercoats are used. This alloy has a low coefficient of friction. Deposits are solderable, hard (650—710 HV ), act as etch resists, and find use ia pfinted circuit boards, watch parts, and as a substitute for chromium ia some apphcafions. The rose-pink color of 65% fin is attractive. In marine exposure, tin—nickel is about equal to nickel—chromium deposits, but has been found to be superior ia some iadustfial exposure sites. Chromium topcoats iacrease the protection further. Tia-nickel deposits are bfitde and difficult to strip from steel. Temperature of deposits should be kept below 300°C. 

The 02 reactive ion etching rates of poly(disilanylenephenylene) 10 and 11, and polyimide (PIQ) were measured. As can be seen in Figure 4, the polymers 10 and 11 show very high etching resistance against the oxygen plasma, compared with the PIQ. 

Initial studies of the dry-etch resistance of these resists showed that PFEMA had an etching rate in a CCl plasma (p = 0.2 torr, P = 600 W) about threeotimes lower (i.e. 380 X/min) than that of aluminum (i.e. 1200 A/min). 

Acrylic paint, degradation of, 11 415 Acrylic pigmented fibers, 11 213 Acrylic polymers, 11 628. See also Acrylics etch resistance of, 15 179 for 193-nm resists, 15 178-179 Acrylic powder coatings, 7 52-53... 

The etching resistance of a resist is simply a function of how well the material withstands the pattern transfer processes used in device manufacturing. Its resistance must be sufficiently high to allow precise transfer of the resist image into the underlying substrate with < 10% linewidth change. This is not an easy... 

Materials that exhibit enhanced solubility after exposure to radiation are defined as positive resists. The mechanism of positive resist action in most of these materials involves either main-chain scission or a polarity change. Positive photoresists that operate on the polarity change principle have been widely used for over three decades in the fabrication of VLSI devices and they exhibit high resolution and excellent dry etching resistance. Ordinarily, the chain scission mechanism is only operable at photon wavelengths below 300 nm where the energy is sufficient to break main chain bonds. 

Etching resistance = novolac based positive photoresists... 

Scanning electron microscopy confirmed sub-0.5p.m resolution capabilities in TBSS -acid generator resist films (Figure 3). Note that the edge profiles are nearly vertical. Preliminary results indicate that the plasma etching resistance is satisfactory for semiconductor device processing. 

Copolymer Approach to Design of Sensitive Deep-UV Resist Systems with High Thermal Stability and Dry Etch Resistance... 

The methacrylate units incorporated in the polymer chain give excellent UV transmission, while the a-methylstyrene units provide good dry etch resistance and high thermal stability. 

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