Positive electron-beam resist

As a general rule, the sensitivity of conventional electron beam resists is not sufficient for economic throughput in an x-ray lithographic system. This is particularly true of positive electron resists such as PMMA, the most widely used x-ray resist for experimental purposes, whose sensitivity of >500 mJ/cm2 is some 100 times too slow for practical application. Even PBS only shows a sensitivity of 94 mJ/cm2 to PdLa x-rays. Consequently, the major research effort has concentrated on negative resists because of their higher inherent sensitivity. 

Positive-Working Electron-Beam Resists Based on Maleic Anhydride Copolymers... 

A variety of techniques have been used in the present work to establish the relative sensitivity of positive electron-beam resists made from copolymers of maleic anhydride (Table I). The term sensitivity is used rather loosely at times. In the most practical sense, sensitivity is a comparative measure of the speed with which an exposure can be made. Thus, the exposure conditions, film thickness, developing solvent and temperature may be involved. Most often, the contrast curve is invoked as a more-or-less objective measure of sensitivity. The dose needed to allow removal of exposed film without removing more than about 70% of the unexposed film can be a measure of sensitivity. The initial film thickness and the developing conditions still must be specified so that this measure is not, strictly speaking, an intrinsic property of the polymeric material. 

POHL ET AL. Positive- Working Electron-Beam Resists... 

Many papers have been published on positive electron-beam resists. These resists are mostly polymers which are degraded upon electron-beam irradiation. The resulting lower molecular weight polymer in the exposed area can be selectively removed by a solvent under certain developing conditions. The development is accomplished by the difference in the rate of dissolution between the exposed and unexposed areas, which is a function of the molecular weight of the polymer. Recently, Willson and his co-workers reported the new type of positive resist, poly(phthalaldehyde), the exposure of which in the presence of certain cationic photoinitiators resulted in the spontaneous formation of a relief image without any development step (/). 

In this article we will describe two different types of positive electron-beam resists, which were briefly reported in our previous communications (2,3). One is the homopolymer or copolymer with methyl methacrylate and a-substituted benzyl methacrylate, which forms methacrylic acid units in the polymer chain on exposure to an electron-beam and can be developed by using an alkaline solution developer. In this case, the structural change in the side group of the polymer effectively alters the solubility properties of the exposed polymer, and excellent contrast between the exposed and unexposed areas is obtained. The other is a self developing polyaldehyde resist, which is depolymerized into a volatile monomer upon electron-beam exposure. The sensitivity was extremely high without using any sensitizer. 

Positive Electron-beam Resist of Poly (a-substituted Benzyl Methacrylate). The electron-beam resist behaviors of poly(a-substituted benzyl methacrylate)s are given in Table III. When the exposed resist films were developed with a mixture of MIBK and IPA, the sensitivities of these polymers were on the order of 10-4 C/cm2. When a dilute solution of sodium methoxide in methanol was used as a developer, the sensitivity was enhanced as compared with the former case, and increased with an increase in the bulkiness of the ester group of the polymer except for poly(a,a-diphenylethyl methacrylate). 

Aldehyde Copolymer Self Developing Electron-beam Resists. The ceiling temperature for the copolymerization of aliphatic aldehydes is usually below 0°C and the copolymers are easily depolymerized into monomeric aldehydes above 150°C under vacuum. This depolymerization into monomers also occurs on electron-beam or X-ray exposure as evidenced by combined gas-liquid partition chromatography-mass spectrometry. As a result, the copolymers of aldehydes behaved as self-developing positive resists and almost complete development was accomplished without any solvent treatment. Electron-beam exposure characteristics of the aliphatic aldehyde copolymers studied here are... 

PMMA (polymethylmethacrylate) is a typical positive (scission type) electron beam resist for microlithography. 

Novolac- or phenolic resin-based resists usually show no pattern deformation induced by swelling during development in aqueous alkaline solution. Examples of such resists are naphtho-quinonediazide/novolac positive photoresists, novolac-based positive electron-beam resist (NPR) (1), and azide/phenolic negative deep-UV resist (MRS) (2). Iwayanagi et al.(2) reported that the development of MRS proceeds in the same manner as the etching process. This resist, consisting of a deep-UV sensitive azide and phenolic resis matrix, is also sensitive to electron-beams. This paper deals with the development mechanism of non-swelling MRS and its electron-beam exposure characteristics. 

We have successfully employed the trimethylsilylmethyl appendage to effect oxygen RIE resistance in both positive and negative acting electron-beam resist systems (10,11). The relatively compact nature of this substituent allows the preparation of glassy polymers useful for lithographic applications. The preparation and characterization of select trimethylsilylmethyl substituted resists will be presented in addition to a study of their radiation chemistry and lithographic properties. 

Materials Synthesis and Characterization. In addition to the requirements of etching resistance, sensitivity, solubility and high glass transition temperature (Tg), one of the criteria used in designing both a negative and positive electron-beam resist system was synthetic simplicity. The trimethylsilylmethyl appendage allows the incorporation of silicon into polymeric resists without adverse synthetic complications. Standard free radical or condensation polymerization techniques can be employed with appropriately substituted monomers that are readily available. 

Poly(glycidyl methacrylate) (PGMA), a well-known negative electron beam resist first reported by Hirai et al. (55), actually functions as a positive-tone resist upon DUV exposure (Table 3.1) (56). The epoxide functionality responsible for cross-linking under electron beam exposure does not absorb in the DUV region, and the response of PGMA to DUV radiation is determined by the absorption due to the n — tt transition of the carbonyl chromo-... 

Poly(butene-l sulfone) (PBS), a sensitive, positive, electron beam resist, is highly sensitive to 185-nm radiation (Table 3.4) (9). However, PBS does not absorb above 200 nm, and the sensitization has not been successful. Incorporation of pendant aromatic rings into the polysulfone structure extends the photosensitivity to the DUV and mid-UV regions (72). Himics and Ross (73) reported that carbonyl-containing poly(olefin sulfones) such as poly(5-hexen-2-one sulfone) are sensitive to UV-induced degradation and... 

Since polymers with tetrasubsltuted centers are difficult to synthesize, two main types of positive resists have been dlsclosed. Polymethylmethacrylate r polymethyl Isopropenyl ketone hich undergo side chain elimination and subsequent main chain fracture have been used as positive electron beam resists (cf. 

From Table XI, it can be seen that polymers have spectrum of doses necessary to obtain maximum readout efficiency. We will examine in the following example the imaging of a positive electron beam resist as a function of dose and molecular weight-solubility changes. 

A positive electron beam resist image is developed by immersion in a solvent which dissolves the exposed region at a rate (Sf)which is faster (approx. lOX) than the unexposed rate (Si. The rate of dissolution of a linear polymer is related to its molecular weight by the Uberreiter function (26) ... 

Typical resists include cyclized polyisoprene with a photosensitive crosslinking agent (ex bisazide) used in many negative photoresists, novolac resins with diazoquinone sensitizers and imidazole catalysts for positive photoresists, poly(oxystyrenes) with photosensitizers for UV resists, polysilanes for UV and X-ray resists, and polymethacrylates and methacrylate-styrenes for electron-beam resists (Clegg and Collyer, 1991). Also note the more recent use of novolac/diazonaphthoquinone photoresists for mid-UV resists for DRAM memory chips and chemically amplified photoacid-catalysed hydroxystyrene and acrylic resists for deep-UV lithography (Choudhury, 1997). 

Photosensitized degradation of poly(olefin sulfones) similar to the Hg(3P) photosensitized reactions of olefin sulfones make them subject to photodegradation in easily accessible wavelength regions. Almost all poly(olefin sulfones) have been reported only as positive tone electron beam resists (4). As the only exception, poly(5-hexene-2-one sulfone) has been reported as a positive tone photoresist with or without a photosensitizer, benzophenone (5). Because this polymer has a carbonyl chromophore, its photosensitivity is clearly derived from the polymer structure itself. 

Poly(methyl methacrylate), PMMA, has remained the standard by which to judge positive-working electron-beam resists for over a dozen years (1>.2 .3 4) Hundreds of rival polymers have been disclosed. Most of them exceed PMMA in sensitivity. However, the combination of properties which include stability, sensitivity, contrast, adhesion, and solubility have kept PMMA in the limelight. 

Novolac Based Positive Electron Beam Resist Containing a Polymeric Dissolution Inhibitor... 

A novolac-based positive electron beam resist has been investigated for use in direct device... 

A cresol novolac resin has been synthesized which exhibits a much greater dissolution-inhibiting effect than in various commercially available novolac or phenolic resins. Using this resin, a positive electron beam resist was prepared and its exposure characteristics were examined. A tetramethylammonium hydroxide aqueous solution was used as the developer. The sensitivity reaches 3xl0 6 C/cm2 without post-exposure baking. It was found that the sensitivity to double exposure was much higher than that to single exposure with the same total dose. A similar phenomenon was also... 

---