Chemical vapor deposition spectroscopy

The determination of specific phosphorus compounds in thin films is important. Only through wet chemical analysis was it possible to first discover the presence and then to accurately measure the quantities of P2Os, P203, and phosphine found in plasma, plasma-enhanced, LPO-LTO (low-pressure oxide-low-temperature oxide), and CVD (chemical vapor deposition) processes (3). Methods such as X-ray or FTIR spectroscopy would have seen all phosphorus atoms and would have characterized them as totally useful phosphorus. In plasma and plasma-enhanced CVD films, phosphine is totally useless in doping processes. 

Adem of Advanced Micro Devices, Inc. was granted a patent on the use of Raman spectroscopy to monitor the thickness, crystal grain size, and crystal orientation of polysilicon or other films as they are deposited on semiconductor wafers via low-pressure chemical vapor deposition (CVD).89 The spectra are acquired with a non-contact probe through a suitably transparent window in the loading door. A feedback scheme is discussed. When the thickness has achieved the targeted value, the deposition is stopped. If the crystal grain size or orientation is deemed unsuitable, the deposition temperature is adjusted accordingly. 

In 1987 he was promoted to distinguished member of the technical staff and technical manager. His efforts broadened to include projects on polymer-surface interactions adhesion promotion corrosion protection chemical vapor deposition and thin film growth optical fiber coating synthesis, structure, and reactivity of model organic surfaces and time-resolved surface vibrational spectroscopy. 

BASIL CIS CV CVD DSSC ECALE EC-STM EDX, EDS, EDAX EIS EMF EQCM FAB MS FFG-NMR Biphasic Acid Scavenging Utilizing Ionic Liquids Copper-indium-selenide Cyclic Voltammetry Chemical Vapor Deposition Dye Sensitized Solar Cell Electrochemical Atomic Layer Epitaxy Electrochemical in situ scanning tunnelling microscopy Energy Dispersive X-ray analysis Electrochemical Impedance Spectroscopy Electromotive Force Electrochemical Quarz Crystal Microbalance Fast atom bombardment mass spectroscopy Fixed Field Gradient Nuclear Magnetic Resonance... 

Table 7.5. Energetic positions below the conduction band edge (Ec) and densities of shallow (Hi, Alzn) and deep (I ll -E5) donor-like defect levels (traps) in ZnO identified by temperature-dependent Hall effect and deep level transient spectroscopy, respectively, in undoped PLD films and single crystals grown by seeded chemical vapor deposition (Eagle Picher), taken from H. von Wenckstern [57]...

Ager, J. W. and Drory, M. D. (1993), Quantitative measurement of residual biaxial stress by Raman-spectroscopy in diamond grown on a Ti alloy by chemical-vapor-deposition. Phys. Rev. B, 48(4) 2601-2607. 

Suzuki, R., Ohdaira, T., Shioya, Y. and Ishimaru, T. (2001) Pore characteristics of low-dielectric-constant films grown by plasma-enhanced chemical vapor deposition studied by positron annihilation lifetime spectroscopy , Jpn. J. Appl. Phys. 40, L414. 

Ad = adamantyl Ar = aryl [BarF] = [B 3,5-(CF3)2C6 H3 4] bipy = 2,2 -dipyridyl COD = 1,5-cyclooctadiene CVD = chemical vapor deposition DAB =1,4 diazabuta-diene DBU = l,8-Diazabicyclo[5.4.0]undec-7-ene DIPP = 2,6-j-Pr2C6H3 DMF = dimethylformamide DMSO = dimethylsulphoxide,OSMe2 dppe = 1,2-diphenylphosphino-ethane dppf = l,l -bis(diphenylphosphino)ferrocene dppm = diphenylphos-phinomethane dppz = dipyrido[3,2-a 2, 3 -c]phenazine FTIR = Fourier transform infrared spectroscopy HBpin = pinacolborane, 4,4,5,5-tetramethyl-l,3,2-dioxaborolane HDS = hydrodesulfurization HMPA =... 

However, in recent times, there have been several reports on synthesis of the crystalline form of carbonitride. Zhang et al. " synthesized crystalline carbonitride films with large crystalline grains up to 10 pm (from SEM and XRD spectra) in size by RE plasma assisted hot filament chemical vapor deposition. Li. et al. claimed to have synthesized poly crystalline C3N4 films (from XRD data) at ambient temperature by RE diode sputtering. Erom Auger electron spectroscopy, the N/C ratio was computed to be 1.33 as required for C3N4 stoichiometry. 

Barber ZH, Clyne TW (2002) Ag nanoparticle induced surface enhanced Raman spectroscopy of chemical vapor deposition diamond thin films prepared by hot filament chemical vapor deposition. J Appl Phys 91 6085-6088... 

Bormett RW, Asher SA, Witowski RE, Partlow WD, Lizewski R, Pettit F (1995) Ultraviolet Raman spectroscopy characterizes chemical vapor deposition diamond film growth and oxidation. J Appl Phys 77 5916... 

We have studied alternating germanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were determined by X-ray photoelectron spectroscopy. 

Chemical vapor deposition (CVD) has been used to prepare nanoparticle catalysts, although the technology is quite expensive. Dimethylgold acetylacetonate absorbs on supports such as MgO. Decomposition at > 100°C produces an efficient CO oxidation catalyst. X-ray absorption near edge (XANES) and extended X-ray absorption fine structure spectroscopies (EXAFS) showed that, under steady-state CO oxidation conditions, the catalyst contained Au(0) in the form of (on average) Aus clusters and also additional gold as... 

Chemical vapor deposition (CVD) using TiC was used to prepare Ti/Si02, Ti/MCM-41, and Ti/MCM-48 catalysts. These catalysts were characterized by inductively coupled plasma-atomic emission spectroscopy (ICP-AES), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, nitrogen adsorption, and were used to catalyze the epoxidation of propylene to propylene oxide (PO) with in situ prepared ethylbenzene hydroperoxide (EBHP). CVD time and CVD temperature affected the catalyst performance significantly. The optimum temperature range was 800-900 °C, and the optimum deposition time was 2.5-3 h. The maximum PO yields obtained in a batch reactor were 87.2, 94.3, and 88.8% for Ti/Si02, Ti/ MCM-41, and Ti/MCM-48, respectively. Ti/MCM-41 had higher titanium... 

The CNTs, both single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT) prepared by chemical vapor deposition (CVD) and arc-discharge (AD) methods, respectively, were purchased from Iljin Nanotech, Co., Korea. For proton and electron irradiation experiments, CNTs sheets were prepared as shown in Figure 2 by filtration of the CNT solution mixed in dimethylformamide through a cellulose membrane (pore size 0.45 pm). The thickness of the CNT sheets was approximately 0.5 mm, and they were 47 mm in diameter. After drying in a vacuum oven at 80 °C for 24 hours, CNT sheets (Figure 2) were obtained. These sheets were used in the radiation experiments, and were used for analysis such as SEM, Raman spectroscopy and XPS without any further treatment. For a dispersion test, a CNT powder was used instead of the CNT sheets. 

M. M. Waite, and S. I. Shah, X-ray photoelectron spectroscopy of initial stages of nucleation and growth of diamond thin films during plasma assisted chemical vapor deposition, Appl Phys. Lett., 60(19) 2344-2346 (1992)... 

Chemical vapor deposition (CVD) was applied to produce homogeneous thin films of pure and doped spinel cobalt oxide with similar morphology on the surface of planar and monolithic supports. The planar substrates were used to investigate the thermal stability and the redox properties of the spinel using temperature-programmed methods monitored by emission-FTIR spectroscopy, while the monolithic substrates were used to test the catalytic performance of the deposited films toward the deep oxidation of methane and to evaluate its durability. The high performance of cobalt oxide to oxidize methane in diluted streams was demonstrated at 500 °C. Furthermore, controlled doping of cobalt oxide layers with suitable cations was demonstrated for nickel as an example, which resulted in substantial increase of electric conductivity. 

Hegde RI, Tobin J, Fiordalice RW, Travis EO (1993) Nucleation and growth of chemical vapor deposition TiN films on Si (100) as studied by total reflection X-ray fluorescence, atomic force microscopy, and Auger electron spectroscopy. J Vac Sci Technol A 11 1692-1695 Henderson MA (2002) The interaction of water with sohd surfaces fundamental aspects revisited. Surf. Sci. Rep. 46 1-308... 

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