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Copper indium selenide

BASIL CIS CV CVD DSSC ECALE EC-STM EDX, EDS, EDAX EIS EMF EQCM FAB MS FFG-NMR Biphasic Acid Scavenging Utilizing Ionic Liquids Copper-indium-selenide Cyclic Voltammetry Chemical Vapor Deposition Dye Sensitized Solar Cell Electrochemical Atomic Layer Epitaxy Electrochemical in situ scanning tunnelling microscopy Energy Dispersive X-ray analysis Electrochemical Impedance Spectroscopy Electromotive Force Electrochemical Quarz Crystal Microbalance Fast atom bombardment mass spectroscopy Fixed Field Gradient Nuclear Magnetic Resonance... [Pg.1]

Photovoltaic cells, or solar cells, work by containing matericadmium telluride, or copper indium selenide whose electrons, ire easily excited by photons from the sun, creating electricity. [Pg.183]

Other materials that can be used for semiconductor solar batteries are gallium arsenide GaS, cadmium telluride TeCd, and copper-indium selenide CuInSe. [Pg.359]

The electrodeposition of copper indium selenide and telluride was discussed by Bhattacharya and Rajeshwar (66). The deposition solutions were made in a multistep process. A 0.5 M solution (A) of indium chloride was prepared. The copper solution (B) was prepared from cuprous chloride dissolved in 30 ml of triethanolamine, 40 ml of 30% ammonia and 150 ml of water. The copper concentration was 0.5 M. Solutions A and B were mixed in equal amounts, diluted 10 times and adjusted to pH 1 with HCI. This solution (C) was aged for 24 hrs. The actual deposition bath was made from 20 ml of either 0.1 M selenium oxide or 0.1 M tellurium oxide and 60 ml of solution C. The triethanolamine was added to the copper solution as a complexing agent to shift the deposition potential. Depositions were carried out at -1.0 volt versus a saturated calomel electrode. The initial current density was 12 mA/cm . [Pg.32]

X-ray diffraction patterns of the films showed peaks characteristic of the chalcopyrite copper indium selenide or copper indium telluride compounds. Auger spectra and depth profiles showed the expected signal plus some carbon and surface oxidation. The stoichiometry varied with depth. [Pg.32]

A heterojunction of copper indium selenide on n-type cadmium sulfide indicated that the films, as deposited, were p-type. These films yielded an OCV of 100 mV and SCC of 2 mA/cm . The main problem with these films was poor grain morphology. [Pg.32]

Semiconductor deposition materials used include amorphous silicon, polycrystalline silicon, micro-crystalline silicon, cadmium telluride, and copper indium selenide/sulfide. Typically, the top surface is low iron solar glass for rigid cells (a fluoropolymer for flexible cells), the encapsulant is crosslinkable ethylene-vinyl acetate (EVA), and the rear layer is a Tedlar - PET - Tedlar laminate (although glass, coated PET, or another bondable polymeric film are also used). [Pg.231]

A number of companies are currently involved in thin-fllm photovoltaics [17], and low-cost multilayer thin-fllm amorphous silicon and CdTe (cadmium telluride) systems have already been installed in large numbers with efficiencies of the order of 10% and of about 80% output after 25 years of operation. Large-scale plants have been announced for the so-called CIS (cadmium indium selenide) and CGIS (copper gallium indium diselenide), technologies with production efficiencies in the range 12-13% and laboratory measurements up to 19.9% [18]. [Pg.101]

There are three main thin-film PV cells under development at present amorphous Si, CdTe/CdS, and Cl(G)S/CdS [C1(G)S refers to copper indium (gallium) selenide]. Of these, the last two are polycrystalline (as opposed to amorphous), and both normally employ CD CdS. Crystalline Si cells are not thin films, being at least tens and usually hundreds of microns in thickness, compared to the few microns of active thickness of the thin-fihn cells. [Pg.316]

CIGS Copper indium gallium selenide 4,4 -Dicarboxy-2,2 -biquinoline... [Pg.114]

Another area of development is in lower-cost thin- and ultrathin-film designs. One such product is made by Nanosolar of copper indium gallium selenide (CIGS), which is claimed to achieve up to 19.5% efficiency and is as thin as a newspaper. This claim is yet to be proved. The collector cost is also reduced, because the substrate material on which the ink is printed is much less expensive than the stainless steel substrates that are often used in thin-film solar panels. The manufacturer claims a five- to tenfold reduction in the collector cost (about 1/W) compared to conventional PV cells. [Pg.83]

CIGS Copper indium gallium selenide CO Condenser or compressor COz Carbon dioxide... [Pg.547]

Liska P., Thampi K. R., Gratzel M., Bremaud D., Rudmann D. and Upadhyaya H. M. (2006), Nanocrystalline dye-sensitized solar cell/copper indium gallium selenide thin-fdm tandem showing greater than 15% conversion efficiency , Appl. Phys. Lett. 88, 203103-203106. [Pg.533]

Many other systems based on different nanoparticles have been introduced, such as copper indium disulfide (CuInS2) [263-265], copper indium diselenide (CuInSe2) [266,267], cadmium telluride (CdTe) [268], lead sulfide (PbS) [269,270], lead selenide (PdSe) [271], and mercury telluride (HgTe) [272]. Some of these systems show enhanced spectral response well into the infrared part of the solar spectrum [271,272]. In most cases the absorption of the nanocrystals was, however, quantitatively small as compared to the conjugated polymers. [Pg.57]

InP has been prepared in a similar fashion at 167°C.366 A way to avoid the use of poisonous hydrogen selenide is to treat the copper-indium alloy with selenium vapor at 400°C.367... [Pg.459]

General.—Liquid bismuth has been used as the solvent for calorimetry and data for the enthalpy of solution of copper, indium, and tellurium have been obtained. Enthalpy of formation data are also given for a series of copper selenides. Studies on the distribution of lithium and bismuth between liquid Li-Bi alloys and molten LiCl suggested that a salt-like species LijBi was being selectively dissolved from the alloys. The mutual solubility of thorium and the metallic lanthanides La, Nd, and Eu in bismuth over the range 350—700 °C shows evidence for the formation of solid compounds with the composition ThLnBij,. ... [Pg.555]

The thin-film materials that are discussed in this chapter can be used in depositing one or more thin layers of material on a substrate in the following PV cell technologies (i) CdTe, (ii) copper indium (galUum) selenide (CIS or CIGS), and (iii) Dye-sensitized solar cell (DSSC). The thickness of such layers can vary from a few nanometers to tens of micrometers. [Pg.336]

Copper indium gallium selenide (CuIn,tGai (Se2)... [Pg.125]


See other pages where Copper indium selenide is mentioned: [Pg.337]    [Pg.396]    [Pg.44]    [Pg.112]    [Pg.354]    [Pg.337]    [Pg.333]    [Pg.463]    [Pg.117]    [Pg.337]    [Pg.396]    [Pg.44]    [Pg.112]    [Pg.354]    [Pg.337]    [Pg.333]    [Pg.463]    [Pg.117]    [Pg.253]    [Pg.353]    [Pg.39]    [Pg.313]    [Pg.520]    [Pg.272]    [Pg.397]    [Pg.168]    [Pg.1685]    [Pg.491]    [Pg.25]    [Pg.199]    [Pg.81]    [Pg.397]    [Pg.285]    [Pg.88]   
See also in sourсe #XX -- [ Pg.354 ]




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Copper selenides

Indium selenide

Indium selenides

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