Thin film growth

The requirements of thin-film ferroelectrics are stoichiometry, phase formation, crystallization, and microstmctural development for the various device appHcations. As of this writing multimagnetron sputtering (MMS) (56), multiion beam-reactive sputter (MIBERS) deposition (57), uv-excimer laser ablation (58), and electron cyclotron resonance (ECR) plasma-assisted growth (59) are the latest ferroelectric thin-film growth processes to satisfy the requirements. 

To determine adsorption sites and thin-film growth modes in a chemically specific manner... 

The principal applications of REELS are thin-film growth studies and gas-surface reactions in the few-monolayer regime when chemical state information is required. In its high spatial resolution mode it has been used to detect submicron metal hydride phases and to characterize surface segregation and difRision as a function of grain boundary orientation. REELS is not nearly as commonly used as AES orXPS. 

Moustakas, T., Molecular Beam Epitaxy Thin Film Growth and... 

Ramsey, M. E., Poindexter, E., Pelt, J. S., Marin, J., and Durbin, S. M., Hydrophobic CNx Thin Film Growth by Inductively-coupled RF Plasma Enhanced Pulsed Laser Deposition, Thin Solid Films, Vol. 360, No. 1-2,2000, pp. 82-88. 

Shaikh AV, Rajaram SM, Pathan HM, Min BK, Joo OS, Han SH (2008) CdSe thin film growth Primarily amorphous nanograins to self-assembled nanowires. J Electroanal Chem 615 175-179... 

Furthermore, LEED is an important tool to study thin film growth, and can reveal the mechanism of thin film formation as well as the final stmcture of mono/multi topmost layers versus substrate [Attard et al., 1995]. 

These compounds were studied as potential single-source precursors. However, although they gave clean deposition routes to powders of II VI materials, their nonvolatility means that thin-film growth by conventional CVD techniques was hampered, although it could be improved using new delivery techniques. 

Precursors that have been prepared include a number of bis(dialkyldithio-/diselenocarbamato) cadmium(II)/zinc(II) compounds of the type [M CNRR ) ], (E = S, Se) in which the alkyl substituents are the same (R = R = Me, Et, Pr, Pr1) or different (R = Me, Et R = Hex11, Bun) with the latter giving cleaner film deposition routes (described in the earlier section for thin-film growth). 

The diacetylene monomer employed in the thin film growth technique pioneered by Langmuir and Blodgett (12) must have a strongly polar "head group" and a nonpolar-"tail." The monomer we have used in our studies, CH3 - (CH2)i5 - C = C - C = C -(CH2)g - COOH, has a long alkyl group as the nonpolar "tail."... 

Linear and nonlinear optical properties of a class of polydiacetylenes that can be grown as large area and controlled thickness thin films have been investigated. This involved an integrated research effort including monomer synthesis, thin film growth and new measurement techniques. 

Figure 8.1. Schematic view of thin-film growth during one SILAR cycle, (a) cation adsorption cation O anion (b) rinsing (c) anion reaction anion o cation and (d) rinsing. Reprinted with permission from Lindroos 1997.

Kale, S. S. Mane, R. S. Chung, H. Yoon, M.-Y. Lokhande, C. D. Han, S.-H. 2006. Use of successive ionic layer adsorption and reaction (SILAR) method for amorphous titanium dioxide thin films growth. Appl. Surf. Sci. 253 421 424. 

The ability of nanocrystals to fuse at relatively modest temperatures provides a low-temperature route to thin-film growth. This approach has been successfully used for formation of metallic (Au,53 Ag54) and semiconducting (CdS,52 CdSe,55 HgTe56) thin films with good electrical conductivity. However, a serious limitation of this approach is associated with the presence of organic... 

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