Diode sputtering

The simple d-c diode sputtering configuration has the advantage that (/) large areas can be sputtered rather uniformly over long periods of time (2) the target can be made conformal with the substrate (J) the target-to-substrate distance can be made smaU compared to thermal vaporization and (4) the... 

Diode sputtering the simplest but requires an electrically conductive target it has low energy efficiency and electron bombardment may cause significant damage of the substrate. 

Direct consumption sugar, 23 450-451 Direct contact heat exchangers, 13 268 Direct cooler evaporators, 21 537 Direct-coupled plasma (DCF), 25 370 Direct covalent carbon nanotube functionalization, 17 54-55 Direct current (dc) diode sputtering, 24 730-731. See also dc sensing current... 

NiFe/Cu/Co NiFe/Cu/NiFe/FeMn [NisoFeTo/Cu/Ca/CuJ r-f diode sputtering on Si(l00) single-crystal wafers at RT resistance changes <70% within a few amperes/m resistance changes of 3-4% in fields of 40 800 A/m... 

However, in recent times, there have been several reports on synthesis of the crystalline form of carbonitride. Zhang et al. " synthesized crystalline carbonitride films with large crystalline grains up to 10 pm (from SEM and XRD spectra) in size by RE plasma assisted hot filament chemical vapor deposition. Li. et al. claimed to have synthesized poly crystalline C3N4 films (from XRD data) at ambient temperature by RE diode sputtering. Erom Auger electron spectroscopy, the N/C ratio was computed to be 1.33 as required for C3N4 stoichiometry. 

The process data for the sputter deposition of cBN films by RF (13.56 MHz) diode sputtering with hBN and B4C targets as well as by d.c. magnetron sputtering with B4C targets have been reported in detail elsewhere [21,24,54]. In both configurations the ionization was enhanced by additional magnetic coils positioned around the substrate holder. The substrate electrodes were operated either with a d.c. potential, with pulsed d.c. [57] or with RF power. 

We deposited the gold nanostructures or nanolayers from a gold target (99.999%) by diode sputtering (BAL-TEC SCD 050 equipment) onto pristine polymers. The deposition was... 

Simultaneous ion-enhanced deposition leads to a more homogeneous coating. Such processes are described in a number of articles and patents [88 to 100]. While ions are accelerated to energies of 120 keV, a modification of such methods involves the use of low-energy nitrogen ion beams (from 200 to 5000 eV) [101 to 106]. The dependence of the formation of p-BN on the bias voltage has been studied in the reactive diode sputtering of boron nitride [107]. Sputter-deposition of BN layers is also mentioned in patents [89 to 110]. 

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