Plasma-assisted MBE

Si doping of GaN by plasma assisted MBE was reported with a dopant concentration up to 2 x 1019 cm 3 measured both electrically and by SIMS [2]. SIMS measurement of the Si profiles in GaN shows that the dopant concentration was constant throughout the layers, and there was no evidence for segregation or diffusion in the layers for the range of concentrations considered. The doped layers were smooth and did not show any deterioration of the surface morphology. The chemical concentration of Si was the same in both wurtzite and zincblende GaN for a fixed Si flux. The Si concentration varied with cell temperature in the expected manner [3],... 

Si (0 0 1) Electron cyclotron resonance microwave-plasma-assisted MBE 4.52 0.05 1992 [100]... 

The first planar nonpolar a-plane InN grown on r-plane sapphire using an AlN nucleation layer or GaN buffer layer by plasma-assisted MBE was reported by the research group from Cornell University in 2003 [38]. With this, all the nitrides with nonpolar orientations were completed, thus paving the way toward a whole range of nitride-based nonpolar heterostructures and devices. 

Kato et al. [163] and Iwata et al. [164] have performed similar studies on ZnO heteroepitaxial layers grown using plasma-assisted MBE and radical-source MBE techniques. Kato et al. [163] used (112 0)a-plane sapphire substrates and high-temperature growth with low-temperature buffer layers for high-quality undoped ZnO epitaxial films. They obtained electron mobilities as high as 120 cm s and... 

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