Semiconductors wafer

Reactive Hquid infiltration (45,68,90,93,94) is similar to the CVI process used to make RBSN. Driven by capillarity, a reactive Hquid infiltrates a porous preform and reacts on free surfaces. Reactive Hquid infiltration is used to make reaction bonded siHcon carbide (RBSC), which is used in advanced heat engines and as diffusion furnace components for semiconductor wafer processing. 

In Total Reflection X-Ray Fluorescence Analysis (TXRF), the sutface of a solid specimen is exposed to an X-ray beam in grazing geometry. The angle of incidence is kept below the critical angle for total reflection, which is determined by the electron density in the specimen surface layer, and is on the order of mrad. With total reflection, only a few nm of the surface layer are penetrated by the X rays, and the surface is excited to emit characteristic X-ray fluorescence radiation. The energy spectrum recorded by the detector contains quantitative information about the elemental composition and, especially, the trace impurity content of the surface, e.g., semiconductor wafers. TXRF requires a specular surface of the specimen with regard to the primary X-ray light. 

HANDBOOKOF SEMICONDUCTOR WAFER CLEANING TECHNOLOGY edited by Werner Kern... 

Expensive semiconductor wafers are not required powders of the semiconductor suffice. This is convenient because various materials which are not available as electrodes can be used. 

The fabrication method generates functional elements via anisotropic etching of high-quality semiconductor wafers, referred to as mother wafers.13 17 25 The process begins with photolithographic definition of patterns... 

Tong, Q.-Y. Gosele, U. 1999. Semiconductor Wafer Bonding Science and Technology. John Wiley, New York. 

Incident beam in (110) plane, reciprocal lattice section perpendicular to [1 0], Case (b) would occur if the incident beam were parallel or perpendicular to the plane of the (110) flat cut on many semiconductor wafers. Many more reflections are available in case (b). The semicircular segments showing accessible and inaccessible reflections are sections of hemispheres whose axes are vertical on this diagram... 

Wright of Advanced Micro Devices discusses the use of Raman microspectroscopy to measure the integrity of a film on semiconductor wafers during manufacture in US patent 6,509,201 and combined the results with other data for feed-forward process control [181]. Yield is improved by providing a tailored repair for each part. Hitachi has filed a Japanese patent application disclosing the use of Raman spectroscopy to determine the strain in silicon semiconductor substrates to aid manufacturing [182]. Raman spectroscopy has a well established place in the semiconductor industry for this and other applications [183]. 

Imperial Chemical Industries has introduced a new crystalline poly(ether ether ketone) (PEEK) (structure 4.78). Applications are for compressor plates, valve seats, thrust washers, bearing cages, and pump impellers. In the aerospace industry it is employed as aircraft fairing, fuel valves, and ducting. It is also used in the electrical industry as wire coating and semiconductor wafer carriers. 

Electrochemical properties of silicon single crystals, usually cuts of semiconductor wafers, have to be considered under two distinct respects (1) As an electrode, silicon is a source of charge carriers, electrons or positive holes, involved in electrochemical reactions, and whose surface concentration is a determining parameter for the rate of charge transfer. (2) As a chemical element, silicon material is also involved in redox transformations such as electroless deposition, oxide generation, and anodic etching, or corrosion processes. 

Kern, W (1993) Handbook of semiconductor wafer cleaning technology, Noyes Publication, New Jersey. 

Misra A., Finnie I., 1979, On the scribing and subsequent fracturing of silicon semiconductor wafers, J. Mater. Sci., 14, 2567-2574. 

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