Hot filament chemical vapor

Hot-filament chemical vapor deposition (HFCVD), 17 214-215 Hot-fill market, 20 50-52 Hot-film anemometers, 11 676 Hot flocking, 7 59... 

Fig. 3.6 Schematic diagram of hot-filament chemical vapor deposition system (after Guo and Chen 2007a)...

Baranauskas, V., Ceragioli, H. 1., Peterlevitz, A. C., Tosin, M. C. and Durrant, S. F. (2000), Effects of argon dilution of an ethanol/hydrogen gas feed on the growth of diamond by hot-filament chemical vapor deposition. Thin Solid Films, 377-378 303-308. 

Guo, L. and Chen, G. (2007a), High-quality diamond film deposition on a titanium substrate using the hot-filament chemical vapor deposition method. Diam. Relat. Mater., 16(8) 10. 

Haubner, R. and Lux, B. (1993), Diamond growth by hot-filament chemical vapor deposition State of the art. Diam. Relat. Mater., 2(9) 1277-1294. 

Ku, C. H. and Wu, J. J. (2004), Effects of CCI4 concentration on nanocrystalline diamond film deposition in a hot-filament chemical vapor deposition reactor. Carbon, 42(11) 2201-2205. 

MehtaMenon, P., Edwards, A., Feigerle, C. S., Shaw, R. W., Coffey, D. W., Heatherly, L., Clausing, R. E., Robinson, L. and Glasgow, D. C. (1999), Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films. Diam. Relat. Mater., 8(1) 101-109. 

Venter, A. and Neethling, J. H. (1994), Effect of filament temperature on the growth of diamond using hot-filament chemical vapor deposition. Diam. Relat. Mater., 3(1-2) 168-172. 

Specific conductive silicon substrates have to be carefully prepared before use. For the diamond-deposition process, substrates have to be cleaned, seeded with diamond nanocrystalline seeds at high surface density, and then coated with a grown thick diamond film (from less than 1 pm up to several p,m) by hot filament chemical vapor deposition (HF-CVD). At Adamant, deposition processes are performed automatically in programmable controlled process units, which allow growing diamond on scale up to 0.5 m2. The process is performed under low pressure (1 < 0.1 bar) and high temperature (filament temperature 2,500°C and substrate temperature 800-1,000°C) with a gas mixture composed of CH4, H2 (CH4/H2 ratio <1%), and a boron source (typically trimethyl boron). 

Huang, Z. P., et al. (1998), Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition, Appl. Phys. Lett., 73(26), 3845-3847. 

However, in recent times, there have been several reports on synthesis of the crystalline form of carbonitride. Zhang et al. " synthesized crystalline carbonitride films with large crystalline grains up to 10 pm (from SEM and XRD spectra) in size by RE plasma assisted hot filament chemical vapor deposition. Li. et al. claimed to have synthesized poly crystalline C3N4 films (from XRD data) at ambient temperature by RE diode sputtering. Erom Auger electron spectroscopy, the N/C ratio was computed to be 1.33 as required for C3N4 stoichiometry. 

Barber ZH, Clyne TW (2002) Ag nanoparticle induced surface enhanced Raman spectroscopy of chemical vapor deposition diamond thin films prepared by hot filament chemical vapor deposition. J Appl Phys 91 6085-6088... 

Boron-doped diamond (BDD) thin films were synthesized at CSEM (Neuchatel, Switzerland) by the hot filament chemical vapor deposition technique (HF CVD) on p-type, low-resistivity (l-3mQcm), single-crystal, silicon wafers (Siltronix). The temperature of the filament was between 2440 and 2560 °C and that of the substrate was monitored at 830 °C. The reactive gas was a mixture of 1% methane in hydrogen, containing trimethylboron as a boron source (1-3 ppm, with respect to H2). The reaction chamber was supplied with the gas mixture at a flow rate of 51 min giving a growth rate of 0.24 pm h for the diamond layer. The obtained diamond film has a thickness of about 1 pm ( 10%) and a resistivity of 15mQcm ( 30%). This HF CVD process produces columnar, random textured, polycrystalline films [9]. 

The OAG method has a general nature and can be applied to a variety of materials other than Si. Based on the OAG method, we have synthesized nanowires of a wide range of semiconducting materials including Ge [35], GaN [36, 37], GaAs [38, 39], GaP [41], SiG [40], and ZnO (whiskers) [42]. The actual OAG process was activated by laser ablation, hot-filament chemical vapor deposition (HFCVD) or thermal evaporation. 

Figure 6.15 Scheme of an HF-CVD apparatus (hot filament chemical vapor deposition). 

F. C. Hong, G. T. Liang, J. J. n u, D. Chang, and J. C. Hsieh, Diamond deposition from halogenated methane reactants in a hot-filament chemical vapor deposition reactor, Appl. Phys. Lett, 63(23) 3149-3151 (1993)... 

E. Kondoh, K. Tanaka, and T. Ohta, Homoepitaxial growth of diamond by an advanced hot-filament chemical vapor deposition method, J. Appl. Phys., 74(3) 2030-2035 (1993)... 

K. Kobayashi, T. Nakano, N. Mutsukura, and Y. Machi, Characterization of diamond nucleation on Fe/Si substrate by hot-filament chemical vapor deposition. Vacuum, 44 (l) l-5 (1993)... 

V. P. Godbole and J. Narayan, Nucleation and growth of diamond on FeSi2/Si substrates by hot filament chemical vapor deposition, J. Appl Phys., 71(10) 4944-4948 (1992)... 

Yu J, Bai XD, Ahn J, Yoon SF, Wang EG. Highly oriented rich boron B-C-N nanotubes by bias-assisted hot filament chemical vapor deposition. Chem Phys Lett 2000 323 529-33. 

Lin T, et al. Compositional mapping of the argon - methane - hydrogen system for polycrystaUine to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition system Appl Phys Lett 2000. 

Oxygen in a small concentration was found to be essential for the synthesis of diamond by hot-filament chemical vapor deposition on silicon in the presence of methane [18] and by magnetoactive microwave discharge [19]. 

---