Plasma enhanced vapor deposition

Sharda, T., Soga, T., Jimbo, T. and Umeno, M. (2001), Growth of nanocrystaUine diamond films by biased enhanced microwave plasma chemical vapor deposition. Diam. Relat. Mater., 10(9-10) 1592-1596. 

The material deposition that occurs in the low-pressure electrical discharge has been discussed under various terminologies such as plasma polymerization (PP), plasma-enhanced chemical vapor deposition (PECVD), plasma-assisted chemical vapor deposition (PACVD), plasma chemical vapor deposition (PCVD), and so forth [1]. However, none of these terminologies seems to represent the phenomenon adequately. The plasma aspect in the low-pressure discharge is remote, although it plays a key role in creating the environment from which material deposition occurs to the extent that no chemical reaction occurs without the plasma. In this sense, PECVD and PACVD could be out of the context in many cases in which nothing happens without plasma. In such cases, PP or PCVD would describe the phenomenon better. If the substrate was not heated substantially above the ambient temperature, the use of PECVD or PACVD should be avoided. 

In order to find the domain of LCVD, it is necessary to compare various vacuum deposition processes chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma chemical vapor deposition (PCVD), plasma-assisted CVD (PACVD), plasma-enhanced CVD (PECVD), and plasma polymerization (PP). All of these terms refer to methods or processes that yield the deposition of materials in a thin-film form in vacuum. There is no clear definition for these terms that can be used to separate processes that are represented by these terminologies. All involve the starting material in vapor phase and the product in the solid state. 

The ILD CMP process has been used to polish plasma-enhanced tetraethylortho-silicate (PETEOS) or high-density plasma chemical vapor deposition (HDPCVD) film on deposited silicon wafer. Figure 15.2 shows the ILD CMP process. The stacking of additional layers on top of one another produces a more and more rugged topography. Between each layer, the dielectric is deposited as an insulating material. To obtain a multilevel interconnection, the surface of the wafer must be... 

PECVD. See Plasma-enhanced chemical vapor deposition. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

In PECVD, the plasma generation region may be in the deposition chamber or precede the deposition chamber in the gas flow system. The latter configuration is called remote plasma-enhanced CVD (RPECVD). In either case, the purpose of the plasma is to give activation and partial reaction/reduction of the chemical precursor vapors so that the substrate temperature can be lowered and still obtain deposit of the same quaUty. 

Marks, J., Witty, D., Short, A., Laford, W., and Nguyen, B., Properties of High Quality Nitride Films by Plasma Enhanced Chemical Vapor Deposition, Proc. 11th. Int. Conf. on CVD, (K. Spear and G. Cullen, eds.), pp. 368-373, Electrochem. Soc., Pennington, NJ 08534 (1990)... 

Tsu, D. V., and Lucovsky, G., Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition, J. Vac. Set. Technol. A, 4(3-1 ) 480-485 (May-June 1986)... 

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. 

At the end of last century, a near frictionless carbon (NFC) coating was reported, which is practically hydrogen contained DLC film grown on steel and sapphire substrates using a plasma enhanced chemical vapor deposition (PECVD) system [50]. By using a ball on a disk tribo-meter, a super low friction coefficient of 0.001-0.003 between the films coated on both the ball and the disk was achieved [50]. A mechanistic model was proposed that carbon atoms on the surface are partially di-hydrogenated, resulting in the chemical inertness of the surface. Consequently, adhesive interaction becomes weak and super low friction is achieved [22],... 

Prakash, G. V., Cazzanell, M., Gaburro, Z., Pavesi, L., lacona, F., Franzo, G. and Priolo, F. (2002) Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition. /. Appl. Phys., 91, 4607 610. 

The radio-frequency glow-discharge method [30-34] has been the most used method in the study of a-C H films. In this chapter, it is referred to as RFPECVD (radio frequency plasma enhanced chemical vapor deposition). Film deposition by RFPECVD is usually performed in a parallel-plate reactor, as shown in Figure 1. The plasma discharge is established between an RF-powered electrode and the other one, which is maintained at ground potential. The hydrocarbon gas or vapor is fed at a controlled flow to the reactor, which is previously evacuated to background pressures below lO"" Torr. The RF power is fed to the substrate electrode... 

The preparation of CNTs is a prerequisite step for the further study and application of CNTs. Considerable efforts have been made to synthesize high quality CNTs since then-discovery in 1991. Numerous methods have been developed for the preparation of CNTs such as arc discharge, laser vaporization, pyrolysis, and plasma-enhanced or thermal chemical vapor deposition (CVD). Among these methods, arc discharge, laser vaporization, and chemical vapor deposition are the main techniques used to produce CNTs. 

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... 

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