Plasma chemical vapor deposition

Chemical vapor deposition Plasma etching Photoresist Photolithography Resistance heating Ion implantation Spin-on glass deposition Cathodic arc Ion plating... 

A pulsed plasma has been used to prepare pinhole-free films from relatively nontoxic N vinylpyrrolidone.323 The pulsing reduced fragmentation of the monomer and cross-linking. This method should be tried with other monomers. Plasmas are often used for the modification of polymer surfaces.324 These methods are relatively rapid and use no solvent. Decorative coatings of TiN and other inorganic compounds can be applied to metals and other inorganic substrates by sputtering, chemical vapor deposition, plasmas, and such, as described in Chap. 4.325... 

Low pressure CVD (LPCVD) (vacuum deposition processes) Chemical vapor deposition that is performed in a vacuum. Also called Sub-atmospheric CVD. See also Chemical vapor deposition Plasma-enhanced CVD (PECVD). 

PECVD. See Plasma-enhanced chemical vapor deposition. 

Germanium difluoride can be prepared by reduction (2,4) of GeF by metallic germanium, by reaction (1) of stoichiometric amounts of Ge and HF in a sealed vessel at 225°C, by Ge powder and HgF2 (5), and by GeS and PbF2 (6). Gep2 has been used in plasma chemical vapor deposition of amorphous film (see Plasma TECHNOLOGY Thin films) (7). 

Fig. 21. Schematic illustration of the four primary vapor-phase deposition processes used in optical-fiber fabrication outside vapor deposition (OVD), modified chemical vapor deposition (MCVD), plasma vapor deposition (PVD), and vapor axial deposition (VAD) (115).

S. Sivaram, Principles of Chemical Vapor Deposition Thermal Plasma Deposition of Electronic Materials, Van Nostrand Reinhold, New York, 1995. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

Chemical Vapor Deposition. Chemical vapor deposition (CVD) of siHcon dioxide from tetraethoxysilane assisted by the presence of oxygen and a plasma is an important technology for the deposition of pure and modified dielectrics for microelectronics (61). An alternative method for the deposition of siHcon dioxide utili2es di-/-butoxydiacetoxysilane (62). 

Reactions of boron ttihalides that are of commercial importance are those of BCl, and to a lesser extent BBr, with gases in chemical vapor deposition (CVD). CVD of boron by reduction, of boron nitride using NH, and of boron carbide using CH on transition metals and alloys are all technically important processes (34—38). The CVD process is normally supported by heating or by plasma formed by an arc or discharge (39,40). 

In plasma chemical vapor deposition (PCVD), the starting materials are typically SiCl, O2, 2 6 GeCl (see Plasma technology). Plasma chemical vapor deposition is similar to MCVD in that the reactants are carried into a hoUow siUca tube, but PCVD uses a moving microwave cavity rather than a torch. The plasma formed inside the microwave cavity results in the deposition of a compact glass layer along the inner wall of the tube. The temperatures involved in PCVD are lower than those in MCVD, and no oxide soots are formed. Also, the PCVD method is not affected by the heat capacities or thermal conductivities of the deposits. 

Chemical vapor deposition is a synthesis process in which the chemical constituents react in the vapor phase near or on a heated substrate to form a solid deposit. The CVD technology combines several scientific and engineering disciplines including thermodynamics, plasma physics, kinetics, fluid dynamics, and of course chemistry. In this chapter, the fundamental aspects of these disciplines and their relationship will be examined as they relate to CVD. 

Handbook of Chemical Vapor Deposition 9.3 Glow-Discharge (Microwave) Plasma... 

Ohtake, N., and Yashikawa, M., Diamond Film Preparation by Arc Discharge Plasma Jet Chemical Vapor Deposition in the Methane Atmosphere, / Electrochem. Soc., 137(2) 717-722(1990)... 

Kurihara, K., Sasaki, K., Kawarada, M., and Koshino, M., High Rate Synthesis of Diamond by DC Plasma Jet Chemical Vapor Deposition, Phys. Lett., 52(6) 437 38 (1988)... 

Marks, J., Witty, D., Short, A., Laford, W., and Nguyen, B., Properties of High Quality Nitride Films by Plasma Enhanced Chemical Vapor Deposition, Proc. 11th. Int. Conf. on CVD, (K. Spear and G. Cullen, eds.), pp. 368-373, Electrochem. Soc., Pennington, NJ 08534 (1990)... 

Tsu, D. V., and Lucovsky, G., Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition, J. Vac. Set. Technol. A, 4(3-1 ) 480-485 (May-June 1986)... 

Mantyla, T., Vuoristo, P., and Kettunen, P., Chemical Vapor Deposition of Plasma Sprayed Oxide Coatings, Thin Solid Films, 118(4) 437-444(24Aug. 1984)... 

Inside" processes—such as modified chemical vapor deposition (MCVD) and plasma chemical vapor deposition (PCVD)—deposit doped silica on the interior surface of a fused silica tube. In MCVD, the oxidation of the halide reactants is initiated by a flame that heats the outside of the tube (Figure 4.8). In PCVD, the reaction is initiated by a microwave plasma. More than a hundred different layers with different refractive indexes (a function of glass composition) may be deposited by either process before the tube is collapsed to form a glass rod. 

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