MOCVD chemical vapor

MOCVD. See Metal organic chemical vapor deposition. 

LPE = liquid-phase epitaxy, MOCVD = metalorganic chemical vapor deposition, VPE = vapor-phase epitaxy. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

Researchers in Japan have determined that copper interconnects deposited by metallo-organic chemical vapor deposition (MOCVD), then followed by chemical mechanical polishing, provides sub-quarter-micron interconnects and can be achieved on a production basis. Titanium nitride and borophosphosilicate glass provide effective barriers against copper diffusion.PL[H]... 

Several patents dealing with the use of volatile metal amidinate complexes in MOCVD or ALD processes have appeared in the literature.The use of volatile amidinato complexes of Al, Ga, and In in the chemical vapor deposition of the respective nitrides has been reported. For example, [PhC(NPh)2]2GaMe was prepared in 68% yield from GaMes and N,N -diphenylbenzamidine in toluene. Various samples of this and related complexes could be heated to 600 °C in N2 to give GaN. A series of homoleptic metal amidinates of the general type [MIRCfNROilnl (R = Me, Bu R = Pr, BuO has been prepared for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. The types of products are summarized in Scheme 226. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. 

The U.S. electronics industry appears to be ahead of, or on a par with, Japanese industry in most areas of current techniques for the deposition and processing of thin films—chemical vapor deposition (CVD), MOCVD, and MBE. There are differences in some areas, thongh, that may be cracial to future technologies. For example, the Japanese effort in low-pressure microwave plasma research is impressive and surpasses the U.S. effort in some respects. The Japanese are ahead of their U.S. counterparts in the design and manufacture of deposition equipment as well. 

Silver(I) /3-diketonate derivatives have received significant attention due to the ease with which they can be converted to the elemental metal by thermal decomposition techniques such as metal organic chemical vapor deposition (MOCVD).59 The larger cationic radius of silver(I) with respect to copper(I) has caused problems in achieving both good volatility and adequate stability of silver(I) complexes for the use in CVD apparatus. These problems have been overcome with the new techniques such as super critical fluid transport CVD (SFTCVD), aerosol-assisted CVD (AACVD), and spray pyrolysis, where the requirements for volatile precursors are less stringent. 

In chemical vapor deposition (CVD or MOCVD), a film of the desired material is prepared by evaporation of volatile precursor molecules which then decompose to give a film deposited on the substrate. The ordering in the film as it grows is dictated by the surface ordering of the substrate, hence the deposition is epitaxial . The necessary decomposition of the precursor molecules can take place either on the surface of the substrate or in the gas phase close to it. 

Various techniques of thin film deposition, including CVD (also abbreviated as MOCVD, metalloorganic chemical-vapor deposition) have been under intensive development for the. r-block elements, and particularly the alkaline earth metals, since the late 1980s. - The lability of the Cp rings of 49 has also made it a useful source of the... 

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... 

Metal dithiophosphinates focused recent interest due to their potential use as single source precursors for low-pressure, metal-organic chemical vapor deposition (LP-MOCVD) of metal sulfides. Thus, zinc and cadmium dithiophosphinates and their phenanthroline and bipyridine adducts were characterized and used for deposition of ZnS and CdS.85,86... 

---