Metalorganic chemical vapor deposition MOCVD

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

S. F. DenBaars and S. Keller, Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides... 

S. P. DenBaars and S. Keller, Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides W. A. Bryden and T. J. Kistenmacher, Growth of Group III-A Nitrides by Reactive Sputtering N. Newman, Thermochemistry of III-N Semiconductors S. J. Pearton and R. J. Shul, Etching of III Nitrides... 

Charge carriers in semiconductors can be confined in one spatial dimension (ID), two spatial dimensions (2D), or three spatial dimensions (3D). These regimes are termed quantum films, quantum wires, and quantum dots as illustrated in Fig. 9.1. Quantum films are commonly referred to as single quantum wells, multiple quantum wells or superlattices, depending on the specific number, thickness, and configuration of the thin films. These structures are produced by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) [2j. The three-dimensional quantum dots are usually produced through the synthesis of small colloidal particles. 

FIGURE 32.16 Steps in the metalorganic chemical vapor deposition (MOCVD) process for forming opticai fiber preforms. 

This section reviews the growth process of III-V compound semiconductor on Si substrate grown by metalorganic chemical vapor deposition (MOCVD). The nucle-ation of GaP and GaAs on Si substrate, the dislocation generation mechanism, antiphase domain (APD) structure of GaP on... 

Epitaxial ItcHNOLOGY for Integrated Circuit Manufacturing Excitons, Semiconductor Lasers Lasers, Optical Fiber Lasers, Solid-State Light Emitting Diodes Metalorganic Chemical Vapor Deposition (MOCVD) Molecular Beam Epitaxy, Semiconductors Optical Amplifiers (Semiconductor) Semiconductor Alloys... 

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