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Titanium nitrides

Aluminum nitride may be used in composite structures containing aluminum for either structural or electronic applications, due to its attractive thermal, electronic, and mechanical properties [176-178]. AlN ceramics are also known to have a sufficiently high-temperature compatibility with refractory metals. Finally, AlN is an ecologically safe material. The structure of AlN as a ceramics layer of the multilayer Al/AlN composites has been investigated to only a limited degree [179]. [Pg.75]

Titanium nitride (TiN) is an extremely hard ceramic material which is often used as a coating on titanium alloys, steel, carbide, and aluminum components to improve the substrate s surface properties. When applied as a thin coating, TiN is used to harden and protect cutting and sliding surfaces, for decorative purposes, and as a nontoxic exterior for medical implants [189]. [Pg.75]

The crystal structure is cubic (cF8, space group Fm3m, No. 225), while the coordination geometry is octahedral with a lattice parameter of 4.240 A [190]. The typical formation has a crystal structure of NaCl-type, with a roughly 1 1 stoichiometry however TiN compounds with x ranging from 0.6 to 1.2 are thermodynamically stable [190-195]. [Pg.75]

The detailed structure and bonding character of the cubic TiN compounds have been extensively investigated [196]. [Pg.75]

The most common methods of TiN thin film creation are physical vapor deposition (PVD usually sputter deposition, cathodic arc deposition, or electron beam heating) and CVD. Eor both methods, pure titanium is sublimated and reacted with nitrogen in a high-energy, vacuum environment. PVD is preferred when film oating [Pg.75]

Due to the need to increase the packing density in VLSIs (very large scale integrated devices), thermally stable, low-resistive contacts are becoming more and more important. These should also act as interdiffusion barriers to prevent junction failures. TiN has become attractive for silicon technology because of its high conductivity and its excellent properties as a barrier layer. The efficiency of TiN to prevent aluminum diffusion into silicon in Al/TiN/Si trilayers was ascertained up to temperatures of 550°C[14]. [Pg.155]

A variety of other applications and properties can be mentioned forTiN films. For example, it has been successfully employed as a buffer layer on hastelloy for YBa2Cu307 t superconductor films. Kumar and coworkers [15] have demonstrated an enhancement of the critical current density (1 ) by using this type of interdiffusion layer. [Pg.155]

PVD techniques offer several possibilities to obtain TiN films below 500 °C, but poor step coverage is observed using these deposition methods. CVD is a very promising alternative to PVD, because it allows for the growth of films with excellent step coverage on an industrial scale. [Pg.156]

In addition to the necessary properties of all CVD sources, TiN-precursors should fulfill the following requirements low decomposition temperature in order to obtain TiN deposition below 450 °C and compatibility with interconnects such as Al. [Pg.156]

From the chemical point of view, there are two main processes to obtain thin films of TiN by CVD, namely (1) via a chemical reaction of a titanium source and a nitrogen source, or (2) via the decomposition of a nitrogen containing titanium precursor (single source precursor). Each of them needs a special development of precursors. [Pg.156]


Small amounts of TiN, HfN, and other metallic nitrides are produced on a pilot-plant scale. Titanium nitride is sold for 40—100/kg, depending on purity and grain si2e. Prices for HfN are ca 400 /kg. [Pg.55]

Magnesium reacts slowly at lower temperatures to give the amide, as do all active metals this reaction is catalyzed by transition metal ions. Aluminum nitride [24304-00-5] AIN, barium nitride [12047-79-9] Ba2N2, calcium nitride [12013-82-0] Ca2N2, strontium nitride [12033-82-8], Sr2N2, and titanium nitride [25583-20-4], TiN, may be formed by heating the corresponding amides. [Pg.338]

Decorative. Titanium nitride has a golden color and is used extensively to coat steel and cemented carbide substrates for watch cases, watch bands, eyeglass frames, etc. It provides exceUent scratch resistance as weU as the desired aesthetic appearance, and it replaces gold coatings used previously. [Pg.51]

Nitrogen dissolves in metallic titanium up to a nitrogen content of 20 atom % (TINq 23)- Above 30 atom % (TINq a cubic titanium nitride phase is stable. [Pg.118]

Titanium Nitride. Titanium nitride [25583-20-4] has the cubic NaCl stmeture, but the stmeture is stable over a wide range of either anion or cation deficiency (TINq 25 = 421 pm TiN q, = 423.5 pm). The nitride is a better conductor of electricity than titanium metal. It becomes... [Pg.118]

The resulting titanium nitride forms a sintered mass, which must be subsequently milled to form a powder having a wide size distribution. The powders produced by these routes ate typically 0.5—10 )Tm, with a wide size distribution. Very fine powders (0.005—0.5 -lm) have been prepared at pilot-plant scale... [Pg.118]

A hquid-phase reaction in which TiCl is reacted with hquid ammonia at —35 C to form an adduct that is subsequendy calcined at 1000°C has also been proposed (35). Preparation of titanium nitride and titanium carbonitride by the pyrolysis of titanium-containing polymer precursors has also been reported (36). [Pg.119]

Titan-kaliumfluorid, n. potassium fluotitanate, -karbid, n, titanium carbide, -metall, n. titanium metal, -nitrid, n, titanium nitride, TitanofluorwasserstoffsMure, /. fluotitanous acid, fluotitanic(III) acid,... [Pg.447]

Titan-s ure, /. titanic acid. -sMureonhydrid, n. titanic anhydride, titanium dioxide (TiOj). -schwefelsdure,/. titanosulfmic acid, -stahl, m. titanium steel, -stickstoff, m. titanium nitride, -verbindung, /. titanium compound, -weiss, n. titanium white. [Pg.447]

Ceramic-coated disposable inserts, including silicon nitride, boron nitride, titanium nitride (TIN), titanium carbide (TIC) and sintered synthetic diamond ... [Pg.872]

Other Binary Compounds.—Scandium nitride and zirconium and titanium carbide do not conform with the theoretical radii. It is possible that these crystals do not consist essentially of Sc+3, N 3, Ti+4, Zr+4 and C-4 ions, especially since zirconium and titanium nitride, ZrN and TiN, also form crystals with the sodium chloride structure but possibly also the discrepancy can be attributed to deformation of the anions, which have very high mole refraction values. [Pg.268]

Also noted is the rapid expansion of a number of materials produced by CVD, which include copper, tungsten, diamond, silicon carbide, silicon nitride, titanium nitride, and others. The coverage of the chemistry and deposition techniques of these materials has been greatly expanded. [Pg.6]

Diffijsionbarrierlayersforadvancedsemiconductorinte-grated circuits of titanium nitride deposited by metallo-organic CVD (MOC VD)... [Pg.25]

Titanium carbide and titanium nitride coatings for carbide tools that greatly outperform uncoated tools and are taking an increasing share of the market. [Pg.26]

Many CVD reactions are being investigated for the deposition of carbides and nitrides, particularly for titanium nitride for semiconductor applications, such as diffusion barrier. The following is a summary of the metallo-organic precursors and deposition condition presently used in development or production of these materials. [Pg.95]

Hillman, J., et al., Integrated CVD Titanium and Titanium Nitride Process for Sub-0.5- im Metallization f Solid-State Technology, pp. 147-152 (July 1995)... [Pg.182]

DLC coatings are already in production in several areas (optical and IR windows) and appear particularly well-suited for abrasion and wear applications due to their high hardness and low coefficient of friction. They have an extremely smooth surface and can be deposited with little restriction of geometry and size (as opposed to CVD diamond). These are important advantages and DLC coatings will compete actively with existing hard coatings, such as titanium carbide, titanium nitride, and other thin film... [Pg.210]

Titanium nitride (TiN) is an important industrial material used extensively as a CVD coating. Its characteristics and properties are summarized in Table 10.7. [Pg.283]

Reduction Reactions. Titanium nitride coatings are produced by CVD with titanium tetrachloride as the metal source and either nitrogen gas or ammonia as a source of nitrogen ... [Pg.285]

CVD titanium nitride (TiN) is the most important interstitial-nitride coating from an application standpoint. It is used extensively to provide wear resistance and as a diffusion barrier and antireflection coating in semiconductor devices. 1 °]... [Pg.287]

England, K. M., and Mazunder, J., Kinetics and Microstructure of Laser Chemical Vapor Deposition of Titanium Nitride, SPIEProc., 2703 552-562 (Feb. 1996)... [Pg.293]

Interconnect. Three-dimensional structures require interconnections between the various levels. This is achieved by small, high aspect-ratio holes that provide electrical contact. These holes include the contact fills which connect the semiconductor silicon area of the device to the first-level metal, and the via holes which connect the first level metal to the second and subsequent metal levels (see Fig. 13.1). The interconnect presents a major fabrication challenge since these high-aspect holes, which may be as small as 0.25 im across, must be completely filled with a diffusion barrier material (such as CVD titanium nitride) and a conductor metal such as CVD tungsten. The ability to fill the interconnects is a major factor in selecting a thin-film deposition process. [Pg.349]


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