Thin films Chemical vapor deposition

The U.S. electronics industry appears to be ahead of, or on a par with, Japanese industry in most areas of current techniques for the deposition and processing of thin films—chemical vapor deposition (CVD), MOCVD, and MBE. There are differences in some areas, thongh, that may be cracial to future technologies. For example, the Japanese effort in low-pressure microwave plasma research is impressive and surpasses the U.S. effort in some respects. The Japanese are ahead of their U.S. counterparts in the design and manufacture of deposition equipment as well. 

Tiitta M, Niinisto L (1997) Volatile metal beta-diketonates, ALE and CVD precursors for electrolimiinescent device thin films. Chemical Vapor Deposition 3(4), 167-182... 

The preceding treatment is, undoubtedly, an oversimplification. For example, many diatomic molecules dissociate upon adsorption (e.g., H2, SiH, GeH). Each atom from the dissociated molecule then occupies its own distinct surface site and this naturally changes the rate law expression. When these types of details are accounted for, the Langmuir-Hinshelwood mechanism has been very successful at explaining the growth rates of a number of thin-film chemical vapor deposition (CVD) processes. However, more important, our treatment served to illustrate how crystal growth from the vapor phase can be related to macroscopic observables namely, the partial pressures of the reacting species. 

S. A. Mlddlebrooks. Modelling and Control of Silicon, and Germanium Thin Film Chemical Vapor Deposition. PhD Dissertation, University of Wisconsin, Madison, Wisconsin, 2001. 

Jensen K F and Kern W 1991 Thermal chemical vapor deposition Thin Film Processes II ed J L Vossen and W Kern (San Diego, CA Academic) chapter III-1, pp 283-368... 

Fluorination of tungsten and rhenium produces tungsten hexafluoride, WF, and rhenium hexafluoride [10049-17-9J, ReF, respectively. These volatile metal fluorides are used in the chemical vapor deposition industry to produce metal coatings and intricately shaped components (see Thin films,... 

Germanium difluoride can be prepared by reduction (2,4) of GeF by metallic germanium, by reaction (1) of stoichiometric amounts of Ge and HF in a sealed vessel at 225°C, by Ge powder and HgF2 (5), and by GeS and PbF2 (6). Gep2 has been used in plasma chemical vapor deposition of amorphous film (see Plasma TECHNOLOGY Thin films) (7). 

Molybdenum hexafluoride is used in the manufacture of thin films (qv) for large-scale integrated circuits (qv) commonly known as LSIC systems (3,4), in the manufacture of metallised ceramics (see MetaL-MATRIX COMPOSITES) (5), and chemical vapor deposition of molybdenum and molybdenum—tungsten alloys (see Molybdenumand molybdenum alloys) (6,7). The latter process involves the reduction of gaseous metal fluorides by hydrogen at elevated temperatures to produce metals or their alloys such as molybdenum—tungsten, molybdenum—tungsten—rhenium, or molybdenum—rhenium alloys. 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

The epitaxy reactor is a specialized variant of the tubular reactor in which gas-phase precursors are produced and transported to a heated surface where thin crystalline films and gaseous by-products are produced by further reaction on the surface. Similar to this chemical vapor deposition (CVE)) are physical vapor depositions (PVE)) and molecular beam generated deposits. Reactor details are critical to assuring uniform, impurity-free deposits and numerous designs have evolved (Fig. 22) (89). 

Titanium carbide may also be made by the reaction at high temperature of titanium with carbon titanium tetrachloride with organic compounds such as methane, chloroform, or poly(vinyl chloride) titanium disulfide [12039-13-3] with carbon organotitanates with carbon precursor polymers (31) and titanium tetrachloride with hydrogen and carbon monoxide. Much of this work is directed toward the production of ultrafine (<1 jim) powders. The reaction of titanium tetrachloride with a hydrocarbon-hydrogen mixture at ca 1000°C is used for the chemical vapor deposition (CVD) of thin carbide films used in wear-resistant coatings. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

Figure 1 shows a segment of the FTIR absorbance spectrum of a thin film of the oxide of silicon deposited by chemical vapor deposition techniques. In this film, sil-... 

Textured Tin Oxide Films Produced by Atmospheric Pressure Chemical Vapor Deposition from Tetramethyltin and Their Usefulness in Producing Light Trapping in Thin-Film Amorphous Silicon Solar Energy Mater., 18 263-281 (1989)... 

Balog, M., Schieber, M., Patai, S., andMichman, M., Thin Films of Metal Oxides on Silicon by Chemical Vapor Deposition with Organometallic Compounds, J. of Crystal Growth, 17 298-301 (1972)... 

Yoon, S., and Kim, H., Preparation and Deposition Mechanism ofFerroelectricPbTi03 Thin Films by Chemical Vapor Deposition, J. Electrochem. Soc., 135(12) 3137-3140 (1988)... 

Pierson, H. O., Titanium Carbonitride Obtained by Chemical Vapor Deposition, Thin Solid Films, pp. 41-47 (1977)... 

Kern, W., and Ban, V. S., Chemical Vapor Deposition of Inorganic Thin Films, in Thin Film Processes, (J. Vossen and W. Kern, eds.). Academic Press, New York (1978)... 

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