Metal Oxide Chemical Vapor Deposition MOCVD method

Lanthanum oxide thin film was grown on Si substrates by the metall-organic chemical vapor deposition (MOCVD) method (400-650°C) [27]. Thin silicon oxynitride layer on the Si substrate functions well to suppress the interfacial reaction between lanthanum oxide and Si and results in the increase in the dielectric constant of deposited lanthanum oxide. The formed oxynitride layer is also effective in decreasing the leakage current. 

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