Borophosphosilicate glass

Researchers in Japan have determined that copper interconnects deposited by metallo-organic chemical vapor deposition (MOCVD), then followed by chemical mechanical polishing, provides sub-quarter-micron interconnects and can be achieved on a production basis. Titanium nitride and borophosphosilicate glass provide effective barriers against copper diffusion.PL[H]... 

Figure 6.8 Interference problem in SIMS polyatomic ion formation by sputtering of borophosphosilicate glass using an 02+ primary ion beam. (R. C. Wilson, F. A. Stevie and C. W. Magee, Secondary Ion Mass Spectrometry (1989). Reproduced by permission of John Wiley Sons, Inc.)...

On the other hand, bonding of Si to Si was achieved by a low-temperature curing polyimide film [100], or by using an intermediate deposited layer of borophosphosilicate glass and subsequent anodic bonding (300 V, 350°C) [101]. 

Tang SK, Vassiliev VY, Mridha S, Chan LH. Investigation of borophosphosilicate glass roughness and planarization with the atomic force microscope technique. Thin Solid Films 1999 l-2 77-84. 

Figure 1. Energy profiles of particles emitted by the reaction for (a) a 2 nm thick surface deposition, (b) a 660 nm thick borosilicate glass film on Si, and (c) the excited state alpha particles from a borophosphosilicate glass film, 1200 nm thick.

Three compounds of phosphorus have been verified in plasma deposited phosphoslllcate glass and borophosphosilicate glass films. They are phosphorus pentoxide, phosphorus trioxide, and phosphine. Evidence is given for the presence of a fourth phosphorus-containing compound. Data are given from analysis by colorimetry, ion chromatography, and P-31 NMR on standards, plasma, plasma enhanced, and atmospheric CVD films. Some information on LTO/LPO deposited films is included. 

SCH 88] SCHUSTER M., MULLER L., MAUSER K.E., STRAUB R., Quantitative X-ray fluorescence analysis of boron in thin films of borophosphosilicate glasses . Thin Sol Films, vol. 157, p. 325-336, 1988. 

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