Metal oxide semiconductor capacitor

Tan, J., et ah, Metal-Oxide-Semiconductor Capacitors Formed by Oxidation of Polycrystalline Silicon on SiC, Appl. Phys. Lett., Vol. 70, 1997, p. 2280. 

Schottky-Barrier Diode and Metal-Oxide-Semiconductor Capacitor Gas Sensors Comparison and Performance... 

Thermal oxidation of the two most common forms of single-crystal silicon carbide with potential for semiconductor electronics applications is discussed 3C-SiC formed by heteroepitaxial growth by chemical vapour deposition on silicon, and 6H-SiC wafers grown in bulk by vacuum sublimation or the Lely method. SiC is also an important ceramic ana abrasive that exists in many different forms. Its oxidation has been studied under a wide variety of conditions. Thermal oxidation of SiC for semiconductor electronic applications is discussed in the following section. Insulating layers on SiC, other than thermal oxide, are discussed in Section C, and the electrical properties of the thermal oxide and metal-oxide-semiconductor capacitors formed on SiC are discussed in Section D. 

Procedures for thermal oxidation of SiC have been developed and shown to produce oxide layers useful in the fabrication of planar SiC microelectronic devices. The SiC oxidation rate has been studied under conditions commonly used in integrated circuit fabrication. The oxidation rate constants derived in these studies are useful for predicting the oxide thickness formed on SiC under similar conditions. The metal-oxide-semiconductor capacitors formed by thermal oxide layers on both 3C- and 6H-SiC have been shown to have low interface charge densities, suitable for transistor applications. 

Liu, A., R. Jones, L. Liao, D. Smara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia. 2004. A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor. Nature 427 615-618. 

Electrical measurement of the dielectric constant is done through the fabrication of metal—oxide—semiconductor capacitor structures, where the ULK serves as the dielectric of the capacitor. A doped Si wafer is used as the substrate, on which the ULK film is deposited. This ULK film is subjected to CMP, say, or any other process whose impact on ULK characteristics needs to be quantified. An aluminum film is deposited on the backside of the Si wafer to form one of the capacitor contacts. Using a shadow mask, aluminum dots of varying diameters are evaporated onto the surface of the ULK film, to form the other terminal of the capacitor. Each aluminum dot is probed to measure its capacitance (at about 100 kHz). Evaporation through a shadow mask allows for the formation of metal contacts without altering the dielectric further— as would be the case if reactive-ion-etch were used to form the contacts. (It should be noted that more complex process flows can be used to eliminate concerns such as dot-size variation, the effect of probe-tip impact on the dielectric being tested, etc.) The results of electrical measurement of the k-value increase post-CMP of the variety... 

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

Schottky-barrier diode and metal-oxide-semiconductor (MOS) capacitor gas sensors have established themselves as extremely sensitive, versatile solid state sensors. 

Figure 4.12. Charge distributions Qeft) and band diagrams (right) for an n-type metal-oxide-semiconductor (nMOS) capacitor, with different gate bias modes. Shown are (a) Kgate = t -p-Q, (b) accumulation (Kgate < (c) depletion (KpB < fgate < hr), and (d) inversion (Vj < Kgate)- and Vp-Q...

Bismuth(ni) oxide is the most important industrial compound of Bi and is found naturally as the mineral bismite. Bismuth(III) oxide has attracted interest as optical coatings, metal-insulator semiconductor capacitors, microwave integrated circuits and as material for solid oxide fuel cells . At room temperature, monoclinic o -Bi203 is the stable form and possesses a polymeric layer structure. 

Tantalum oxide Gate insulators in metal-oxide-semiconductor devices, dielectrics for capacitors, optical coatings. 

The metal oxide semiconductor with either copper or Cu-3.5%Zn as gate metal and an oxide of 50nm thickness was fabricated. The samples were annealed at 250°C, 300°C, 350°C or 400°C for 30min. Each capacitor was tested at a bias temperature aging (BTA) temperature of 200°C in steps of 30min and at a bias of 2MV/cm. 

The capacitor-type gas sensors are one type of the field-effect devices. The field-effect devices can be classified into two types metal-oxide-semiconductor (MOS) capacitors and transistors (MOSFETs), as shown in Figures 1.2 and 1.3, respectively... 

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