Metal oxide semiconductor devices

Fogelberg, J. and Petersson, L.-G., Kinetic modeling of the H sub 2-0 sub 2 reaction on palladium and of its influence on the hydrogen response of a hydrogen sensitive palladium metal-oxide-semiconductor device, Surface Science, 350(1-3), 91,1996. 

Metal oxide semiconductor arrays, 19 153 Metal oxide semiconductor devices,... 

S. Iwata and A. Ishizaka, Electron Spectroscopic Analysis of the Si02/Si System and Correlation with Metal-Oxide-Semiconductor Device Characteristics, J. Appl. Phys. 79, 6653-6713 (1996). 

In particular, computer memories based on complementary metal oxide semiconductor devices (C-MOS) require a little more than 3 V to... 

D. Schmidt, H. Niimi, B. J. Hinds, D. E. Aspnes, and G. Lucovsky, New approach to preparing smooth Si(lOO) surfaces Characterization hy spectroellipsometry and validation of Si/Si02 interface properties in metal-oxide-semiconductor devices, J. Vac. Sci. Technol. B14(4), 2812, 1996. 

Tantalum oxide Gate insulators in metal-oxide-semiconductor devices, dielectrics for capacitors, optical coatings. 

A wide range of physical parameters are suitable for chemical sensing applications, consequently, there is a very wide variety of different transducers. Some examples of frequent transducing techniques are metal oxide semiconductor devices (MOS diodes and field effect transistors) relying e.g. on changes in electrical fields or opt(r)odes concerning optical phenomena such as absorbance and fluorescence, but also miniaturised capacities [1]. Mass-sensitive, or acoustic, devices constitute another very popular class of transducers. Within this chapter we will focus on this transducing technique and introduce its abihties and properties in combination with selective artificial interaction materials. 

At low concentrations, the gas sensitivity values increase steeply with increase in the gas concentration, which obeys the following standard law of metal-oxide-semiconductor devices (Morrison 1977, Licciulli and Massaro 1999) ... 

Practical interest in rare earth aluminates as microwave dielectric materials remains high. Recently, Shevlin et al. (2005) reported that La cYi- AlOs solid solutions (0.2 possible application as gate dielectrics (which would offer an alternative to silicon dioxide in complementary metal-oxide semiconductor devices) when stabilized in the rhombohe-dral perovskite structure. The needed properties are lost in the orthorhombic modification. Flowever, our previous consideration of the crystal structure (see Section 2.3.1) together with the results of Kyomen and Itoh (2002) reveal that this feature is difficult to realize in practice, that is the rhombohedral modification of Laj Yi j A103 solid solution only exists in a narrow concentration range with X > 0.85, while in the range 0.2 < x < 0.4, the crystal structure will remain orthorhombic. 

Fu, Y., Willander, M., Xu, Q.-X. (2006a). Chapter 5 Quantum effects and nanofabrications in scaling metal-oxide-semiconductor devices. In A. A. Balandin 8t K. L. Wang (Eds.), Handbook of semiconductor nanostructures and nanodevices (Vol. 5, pp. 229-256). Los Angeles American Scientific Publishers. 

Cao Y, Zhang J, Li X, Kosel T H, Fay P, Hall D C, Zhang X B, Dupuis R D, Jasinski J B and Liliental-Weber Z (2005), Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications , Appl Phys Lett, 86, 062105-3. Hussey R J, Sproule G I and Graham M J (1997), The structure and composition of thermal oxides formed on GaAs at 500°C , Proc 27th State-of-the-Art Program on Compound Semiconductors, ECS Proc Vol 97-21, 305-316. 

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