N-type metal oxide semiconductor

Figure 4.12. Charge distributions Qeft) and band diagrams (right) for an n-type metal-oxide-semiconductor (nMOS) capacitor, with different gate bias modes. Shown are (a) Kgate = t -p-Q, (b) accumulation (Kgate < (c) depletion (KpB < fgate < hr), and (d) inversion (Vj < Kgate)- and Vp-Q...

Figure 1.6. Schematic of an n-type metal-oxide-semiconductor (MOS) field transistor cross-section [19]...

The source and drain are both p-type if the current flowing is holes. Surface field effect transistors have become the dominant type of transistor used in integrated circuits, which can contain up to one billion transistors plus resistors, capacitors, and the very thinnest of deposited connection wires made from aluminum, copper, or gold. The field effect transistors are simpler to produce than junction transistors and have many fevorable electrical characteristics. The names of various field effect transistors go by the abbreviations MOS (metal-oxide semiconductor), PMOS (p-type metal-oxide semiconductor), NMOS (n-type metal-oxide semiconductor), CMOS (complementary metal-oxide semiconductor—uses both p-type unipolar and n-type unipolar). 

In order to have more infoimation on the nature of the oxygen species active in partial and total oxidation we investigated the interaction of the hydrocarbons with the pre-oxidized surfaces of oxides where different types of surface oxygen species are formed. In particular we investigated p-type semiconductors like chromia, chromites and cobalt oxide C03O4. Moreover, we studied n-type metal oxides like FezOs, metal ferrites and CuObased catalysts. 

This chapter considers photoanodes comprised of metal oxide semiconductors, which are of relatively low cost and relatively greater stability than their non-oxide counterparts. In 1972 Fujishima and Honda [1] first used a crystal wafer of n-type Ti02 (rutile) as a photoanode. A photoelectrochemical cell was constructed for the decomposition of water in which the Ti02 photoanode was connected with a Ft cathode through an external circuit. With illumination of the Ti02 current flowed from the Ft electrode to the... 

MOSFETs. A type of semiconductor device that utilizes oxide ceramics is a metal-oxide-semiconductor field-effect transistor, abbreviated as MOSFET. Just like the semiconductor junction devices of Section 6.1.1.6, the MOSFET is composed of n-and / -type semiconductor regions within a single device, as illustrated in Figure 6.36. 

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

Note. The Debye length (LD), although not introduced into the present simplified discussion, is a parameter frequently referred to in the gas-sensor literature. It was originally introduced into ionic solution theory and later applied to semiconductor theory where it is especially applicable to semi con -ductor/metal and semiconductor/semiconductor junctions. It is a measure of the distance beyond which the disturbance at the junction has effectively no influence on the electron distribution and therefore closely related to d (see Eq. (4.49)). It is a material parameter given by LD = (j kl /e2(, )12 where cQ is the undisturbed electron concentration, essentially the extrinsic electron concentration in the case of doped n-type tin oxide, and the other symbols have their usual meaning.)... 

Figure 6.1. Structure of a metal-oxide-semiconductor field-effect transistor (MOSFET) and an ion-sensitive field-effect transistor (ISFET). (a) Cross section of an n-type MOSFET (b) An ISFET is created by replacing the metal gate of the MOSFET by an electrolyte and a reference electrode.

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