Gate metallization

Robins, I., Ross, J.F. and Shaw, J.E.A., The logarithmic response of palladium-gate metal-insulator-silicon field-effect transistors to hydrogen, Journal of Applied Physics, 60(2), 843, 1986. 

Keywords Break junction Charge transport Electrolyte gate Metal nanocluster Molecular junction Scanning tunneling microscopy Scanning tunneling spectroscopy... 

The largest influence on the response speed is found to be the temperature. Wingbrant et al. has investigated the temperature-dependence of the response speed for a large number of different devices, with gate metals of 100-nm Pt + 10-nm TaSi, porous Pt, and porous Ir of different thicknesses used as both hydrogen and ammonia sensors [2] (Figure 2.18). 

It accounts for the effects of the difference of work function of the gate metal (j>M and silicon 0Si and any residual charges gss that exist in the gate insulator. 0S is the surface potential of the semiconductor. The mobile electron charge in the surface inversion layer is then given by... 

A problem encountered when aluminium is used as gate metal for a MIS structure is the significant etching of the aluminium by the bromine solution which is used to form vias or contacts in overlaying ZnS insulator films. To solve this problem, it is proposed in EP-A-0407062 to use refractory metals as the metallization layers of an infrared detector. 

The TFT fabrication process on glass substrates starts with 100 nm of Cr for the gate metal, and is followed by a PECVD 200 nm thick Si3N4 dielectric with a 30 nm thick SiC>2 surface layer. The source drain metal is Cr/Au. Each of these layers is patterned using printed wax masks and chemical etching, steps a to d in Fig. 11.8. The surface is modified with a solution deposition of a self-assembled monolayer of octyltrichlorosilane (OTS-8) before inkjet printing deposition of the semiconductor. It has been shown that the OTS-8 layer affects the structural order of PQT-12 in thin films, improving the performance of the TFT [23]. Encapsulation and possibly other subsequent layers may be needed on the TFT, but these are not discussed here. 

Gate metal Pt/Au 121 Al based 12,31 p-gate/W contact f41 Pt based or Ni based... 

S. Dhar, V. Balakrishnan, V. Kumar, S. Ghosh, Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron deices... 

The basic building block of all CHEMFETs is the ion-sensitive field effect transistor (ISFET), introduced in 1970 by Bergveld [4]. In an ISFET the gate metal of a metal oxide semiconductor field effect transistor (MOSFET) is removed and the resulting gate oxide surface (2) is directly exposed to the electrolyte solution (Figure 1). 

Metal oxide semiconductor field effect transistors (MOSFETs) constitute other materials with applicability in the development of biosensors. Usually, a MOSFET structure consists of a metal gate on top of an oxide layer, tyqjically Si02 [189]. The catalytic properties of these sensors depend upon the type of the gate metal as well as the temperature at which the MOSFET is operated. The most used catalytic metals used as gate materials are Pd (is a good... 

Molybdenum Semieonductor gate metallization, high-power laser mirrors, and coatings for solar converters. 

Examples are source, drain, and gate metallization in transistors and diffusion barriers, ohmic contacts, and interconnections (lines, vias, plugs) in integrated circuits. The favorable electrical, mechanical, and chemical properties are ... 

The metal oxide semiconductor with either copper or Cu-3.5%Zn as gate metal and an oxide of 50nm thickness was fabricated. The samples were annealed at 250°C, 300°C, 350°C or 400°C for 30min. Each capacitor was tested at a bias temperature aging (BTA) temperature of 200°C in steps of 30min and at a bias of 2MV/cm. 

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