Type-n semiconductors

Fig. V-14. Energy level diagram and energy scales for an n-type semiconductor pho-toelectrochemical cell Eg, band gap E, electron affinity work function Vb, band bending Vh, Helmholtz layer potential drop 0ei. electrolyte work function U/b, flat-band potential. (See Section V-9 for discussion of some of these quantities. (From Ref. 181.)...

In general, then, anion-forming adsorbates should find p-type semiconductors (such as NiO) more active than insulating materials and these, in turn, more active than n-type semiconductors (such as ZnO). It is not necessary that the semiconductor type be determined by an excess or deficiency of a native ion impurities, often deliberately added, can play the same role. Thus if Lr ions are present in NiO, in lattice positions, additional Ni ions must also be present to maintain electroneutrality these now compete for electrons with oxygen and reduce the activity toward oxygen adsorption. 

Figure Bl.28.9. Energetic sitiration for an n-type semiconductor (a) before and (b) after contact with an electrolyte solution. The electrochemical potentials of the two systems reach equilibrium by electron exchange at the interface. Transfer of electrons from the semiconductor to the electrolyte leads to a positive space charge layer, W. is the potential drop in the space-charge layer.

In tenns of the carrier mobility, the electrical conductivity c of an n type semiconductor can be written as... 

Instead of plotting tire electron distribution function in tire energy band diagram, it is convenient to indicate tire position of tire Fenni level. In a semiconductor of high purity, tire Fenni level is close to mid-gap. In p type (n type) semiconductors, it lies near tire VB (CB). In very heavily doped semiconductors tire Fenni level can move into eitlier tire CB or VB, depending on tire doping type. 

In n type semiconductors, electrons are tire majority carriers. Holes will also be present tlirough accidental incoriioration of acceptor impurities or, more importantly, tlirough tlie intentional creation of electron-hole pairs. Holes in n type and electrons in p type semiconductors are minority carriers. 

A semiconductor laser takes advantage of the properties of a junction between a p-type and an n-type semiconductor made from the same host material. Such an n-p combination is called a semiconductor diode. Doping concentrations are quite high and, as a result, the conduction and valence band energies of the host are shifted in the two semiconductors, as shown in Figure 9.10(a). Bands are filled up to the Fermi level with energy E. ... 

For lightly doped n-type semiconductors at normal operating temperatures there is complete donor dissociation (donor saturation). 

Usually tills is not tire case and Table 5.2 shows values for Eg, jig and ptp for a number of semiconductors having the diamond structure. It will generally be observed from this table that the mobilities of electrons are greater than those of positive holes making these materials n-type semiconductors. 

Hematite an oxide of iron corresponding closely to Fe203 produced during the oxidation of iron it is an n-type semiconductor in which diffusion of O ions occurs via anion vacancies. 

The Ni(OH)2/NiOOH reaction is a topo-chemical type of reaction that does not involve soluble intermediates. Many aspects of the reaction are controlled by the electrochemical conductivity of the reactants and products. Photoelectrochemical measurements [86, 871 indicate that the discharged material is a p-type semiconductor with a bandgap of about 3.7eV. The charged material is an n-type semiconductor with a bandgap of about 1.75eV. The bandgaps are estimates from absorption spectra [87]. 

Figure 13. Numerically calculated PMC potential curves from transport equations (14)—(17) without simplifications for different interfacial reaction rate constants for minority carriers (holes in n-type semiconductor) (a) PMC peak in depletion region. Bulk lifetime 10" s, combined interfacial rate constants (sr = sr + kr) inserted in drawing. Dark points, calculation from analytical formula (18). (b) PMC peak in accumulation region. Bulk lifetime 10 5s. The combined interfacial charge-transfer and recombination rate ranges from 10 (1), 100 (2), 103 (3), 3 x 103 (4), 104 (5), 3 x 104 (6) to 106 (7) cm s"1. The flatband potential is indicated.

Figure 45. (a) Schematic of PMC signal behavior in accumulation region (i), flatband region (ii), and depletion region (iii) with (b) visualization of energy band situation of an n-type semiconductor. 

Observing NEMCA, and actually very pronounced one, with Ti0224 and Ce0271 supports was at first surprising since Ti02 (rutile) and Ce02 are n-type semiconductors and their ionic (O2 ) conductivity is rather low so at best they can be considered as mixed electronic-ionic conductors.77... 

FIGURE 3.45 In an n-type semiconductor, the additional electrons supplied by the electron-rich dopant atoms enter the conduction band (forming the pink band at the bottom of the conduction band), where they can act as carriers for the current. 

Solid-state electronic devices such as diodes, transistors, and integrated circuits contain p-n junctions in which a p-type semiconductor is in contact with an n-type semiconductor (Fig. 3.47). The structure of a p-n junction allows an electric current to flow in only one direction. When the electrode attached to the p-type semiconductor has a negative charge, the holes in the p-type semiconductor are attracted to it, the electrons in the n-type semiconductor are attracted to the other (positive) electrode, and current does not flow. When the polarity is reversed, with the negative electrode attached to the n-type semiconductor, electrons flow from the n-type semiconductor through the p-type semiconductor toward the positive electrode. 

Gallium arsenide is a semiconducting material. If we wish to modify the sample by replacing a small amount of the arsenic with an element to produce an n-type semiconductor, which element would we choose selenium, phosphorus, or silicon Why ... 

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