Metal-insulator-semiconductor capacitors

Huang LJ, Rajesh K, Lau WM, Ingrey S, Landheer D, Noel JP, Lu Z (1995) Interfacial properties of metal-insulator-semiconductor capacitors on GaAs(llO). J Vac Sci Technol A 13 792-796... 

The success of CD CdS in photovoltaic cells has driven related research with potential applications in other semiconductor devices. Since the CD process seems to play a role in the favorable properties of the CdS windows by decreasing interface recombination, studies of its passivation properties on other interfaces and surfaces have been carried out, with considerable success. For example, when a very thin film (ca. 6 nm) was deposited between InP and SiOi, the resulting reduction of the interface state density led to improved electrical properties of metal-insulator-semiconductor capacitors and field effect transistors (FETs)... 

F.H. Hielscher and H.M. Preier, Non-equilibrium C-V and I-V characteristics of metal-insulator-semiconductor capacitors, Solid-State Electron., 12(7) (1969) 527-538. 

Bismuth(ni) oxide is the most important industrial compound of Bi and is found naturally as the mineral bismite. Bismuth(III) oxide has attracted interest as optical coatings, metal-insulator semiconductor capacitors, microwave integrated circuits and as material for solid oxide fuel cells . At room temperature, monoclinic o -Bi203 is the stable form and possesses a polymeric layer structure. 

Thangadurai, R Kaplan, W. D. Mikhelasbvili, V Eisenstien, G. 2009. The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers. Microelectronics Reliability, 49(7) 716-720. 

Metal-insulator-semiconductor capacitor type sensors... 

The test structures used were iridium - silicon dioxide-silicon capacitors with rather large area. Available commercial hydrogen and ammonia sensors consist, e.g., of a sensing element in the form of a transistor, a heater (a diffused resistor) and a temperature sensors (a pn-junction) on the same chip with dimensions smaller than about 1x1 mm. Research and development work is, however, in several cases most easily done on metal-insulator semiconductor capacitors mounted on a thermostatted sample holder. The description of the test structures, their fabrication and physics, given below is, however, very short. More details can be found in several of the references, e.g., ref. [1 — 3,8]. 

Figure 20 Degree of imidisation of polyamic acids determined by the variation of the dielectric dissipation factor (tan S) versus heating time at different temperatures between 200 and 400°C. Experiments are performed at 100 kHz with metal-insulator-semiconductor capacitors built by microlithography on silicon wafers.

Analytical approximations are helpful in order to estimate achievable device properties and to analyze measured current-voltage characteristics. Although MIS (metal insulator semiconductor) capacitors are also of interest, here only the basic analytical dependencies for OFETs, more specifically for TFTs, are compiled. 

Metal inert gas (MIG) welding, 27 369 Metal-insulator-semiconductor (MIS) capacitor, 29 140-143 Metal-insulator-semiconductor devices, 22 191, 192... 

Field-effect transistors (Appendix C) are miniature cousins of the Kelvin probe. The most common is the insulated gate field-effect transistor. The heart of the insulated gate field-effect transistor is the Metal-Insulator-Semiconductor (MIS) capacitor. Let us form this capacitor from palladium (to be modulated by hydrogen), silicon dioxide (insulator), and p-type silicon (semiconductor), and examine the energy levels in this structure (Fig. 6.32). 

Thermal oxidation of the two most common forms of single-crystal silicon carbide with potential for semiconductor electronics applications is discussed 3C-SiC formed by heteroepitaxial growth by chemical vapour deposition on silicon, and 6H-SiC wafers grown in bulk by vacuum sublimation or the Lely method. SiC is also an important ceramic ana abrasive that exists in many different forms. Its oxidation has been studied under a wide variety of conditions. Thermal oxidation of SiC for semiconductor electronic applications is discussed in the following section. Insulating layers on SiC, other than thermal oxide, are discussed in Section C, and the electrical properties of the thermal oxide and metal-oxide-semiconductor capacitors formed on SiC are discussed in Section D. 

Chemical and physical processing techniques for ferroelectric thin films have undergone explosive advancement in the past few years (see Ref. 1, for example). The use of PZT (PbZri- cTi c03) family ferroelectrics in the nonvolatile and dynamic random access memory applications present potentially large markets [2]. Other thin-film devices based on a wide variety of ferroelectrics have also been explored. These include multilayer thin-film capacitors [3], piezoelectric or electroacoustic transducer and piezoelectric actuators [4-6], piezoelectric ultrasonic micromotors [7], high-frequency surface acoustic devices [8,9], pyroelectric intrared (IR) detectors [10-12], ferroelectric/photoconduc-tive displays [13], electrooptic waveguide devices or optical modulators [14], and ferroelectric gate and metal/insulator/semiconductor transistor (MIST) devices [15,16]. 

The MIS capacitor represents the heart of most field effect sensor devices, and the physics of MIS capacitors is of importance and is treated in semiconductor physics and other sensor books (Sze, 1981 Lundstrom, 1995 Dimitrijev, 2000). Here, we will only give the basic physical principles regarding the metal insulator semiconductor field effect transistor (MISFET), since this is the ultimate transducer for commercial sensor devices. 

In field-effect transistors (FET) a potential is applied via metal contacts between two -type semiconductor areas - called source and drain - in a bulk of otherwise /7-type semiconductor material. A metal layer - called the gate - in contact with a thin insulating layer placed on top of the semiconductor (between source and drain) forms a metal/insulator/semiconductor (MIS) capacitor. If the gate is charged, the semiconductor region below the insulator is influenced by the electric field. The electric field thus affects the current flowing between source and drain. In ion-sensitive FETs (iSFETs) the metal layer on top of the insulating layer is replaced by an ion-sensitive material. This ion-sensitive layer is in contact with the analyte solution, and a reference electrode is placed close to it. 

Fig. 5. Metal-insulated semiconductor field effect transistor with n-channel (n-MISFET). (A) the state with uncharged G-I-Su capacitor, (B) open transistor with charged G-I-Su capacitor. Abbreviations S, source electrode D, drain electrode G, gate electrode Su, substrate Al, aluminium contact I, insulator (dielectric) n-Si, p-Si, n- or p-type of silicone...

Although infrared spectroseopy provides valuable information on the cyclization process, there is a general lack of agreement over the degree of imidization actually achieved. In partieular, it was shown that the dielectric properties are more sensitive to the final cure temperature with a eontinuous decrease of the dielectric dissipation factor (tan 5) between 300 and 400 °C. However, it is not elear whether this phenomenon is due to completion of the imidization process or to enhanced chain packing. Curves of Fig. 9.20 illustrate the results obtained with capacitors made of metal—insulator—semiconductor structures in the range of 200—400 °C. It is obvious that tan S decreases with increasing cure temperature to reach a minimum when cure is achieved at 350-400 °C. 

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