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Heteroepitaxial growth

The lead compounds PbS, PbSe, PbTe are narrow-gap semiconductors that have been widely investigated for infrared detectors, diode lasers, and thermo-photovoltaic energy converters. Their photoconductive effect has been utilized in photoelectric cells, e.g., PbS in photographic exposure meters. Integrated photonic devices have been fabricated by their heteroepitaxial growth on Si or III-V semiconductors. [Pg.50]

Lu CY, Adams JA, Yu Q, Ohta T, Olmstead MA, Ohuchi FS (2008) Heteroepitaxial growth of the intrinsic vacancy semiconductor AQSes on Si(l 11) Initial structure and morphology. Phys Rev B 78 075321-075326... [Pg.56]

Takahashi M, Todorobaru M, Wakita K, Uosaki K (2002) Heteroepitaxial growth of CdTe on a p-Si(lll) substrate by pulsed-light-assisted electrodeposition. Appl Phys Lett 80 2117-2119... [Pg.203]

Cl2Ga(N3)] air sensitive, sublimes at 70-100 °C in vacuum UHV-CVD Heteroepitaxial growth on Si and sapphire substrates at 650-700 °C, 1 1 films, no need for additional N source 293... [Pg.1043]

J., Thierry, A., Lotz, B., Andreev, A., Saridftd, N.S. and Sitter, H. (2001) Heteroepitaxial growth of self-assembled highly ordered para-sexiphenyl films A crystallographic study. Physical Review. B, Condensed Matter, 64, 235423. [Pg.207]

Lo Nigro, R., Toro, R., Malandrino, G. and Fragala, I. L. (2003). Heteroepitaxial growth of nanos-tructured cerium dioxide thin films by MOCVD on a (001) Ti02 substrate. Chem. Mater. 15(7), 1434-1440. [Pg.507]

Epitaxial metal deposition — Figure. Schematic representation of heteroepitaxial growth modes... [Pg.257]

Homo- and heteroepitaxial growth of nonpolar smooth zinc oxide films on single-crystal ZnO and sapphire was achieved by MOCVD with Zn(acac)2 at 650 °C substrate and 124°C precursor temperature. [Pg.996]

Judging from the recent progress of R D on heteroepitaxial growth of diamond, it seems that the growth of single crystal diamond films over significantly large areas. [Pg.4]

In this chapter, heteroepitaxial growth of diamond particles and films on cubic boron nitride (cBN), Ni, Co, Cu, TiC, BeO, NijSi, graphite, sapphire, and Si will be described. The crystal parameters of these and other materials are listed in Appendix E. [Pg.91]

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See also in sourсe #XX -- [ Pg.144 ]

See also in sourсe #XX -- [ Pg.204 , Pg.205 ]



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Heteroepitaxial

Heteroepitaxial Growth on cBN, Ni, and Other Substrates

Heteroepitaxial growth of diamond on cBN

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