Very large scale integrated circuits

Integrated circuits-Very large scale integration-Materials. 

Integrated circuits—Very large scale integration— Design and construction—Congresses. 

Integrated circuits—Very large scale integration—Design and construction—Data processing. 2. Silicon compilers. I. Walker,... 

Selective deposition, via plugs and gate electrodes for very large scale integrated circuits (VLSI). 

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

This chapter gives explicit examples of how the techniques of wet (solution) chemistry can be applied to the production of integrated circuits. The quality control for processed thin films, chemicals, and pure water, along with microcontamination analysis, to resolve production problems are discussed. These examples indicate that wet chemical techniques are the only ones available for absolute standardization and measurement of trace metals and their effect on the devices produced by current very-large-scale-integration (VLSI) technology. 

Additive processes ion implantation, 361 metal layer deposition, 361 resist requirement, 361 vapor dopant diffusion, 361 Additives for F scavenging, 415 Advanced very-large-scale integrated-circuit package, 490, 492 Aluminum... 

There exists a considerable literature on CVD (2) but relatively few attempts have been made to combine chemical and physical rate processes to give a complete representation of the deposition process. Most CVD studies have focused on demonstrating the growth of a particular material or crystal structure. However, the combined analysis is necessary in order to design CVD reactors where it is possible to deposit thin films of constant thickness and uniformity across an entire wafer. This is particularly important in the realization of submicron feature sizes for Very Large Scale Integrated Circuits. The further development of devices based on III-V compounds also depends on CVD reactor design improvements since the composition and thus the electronic properties of these materials vary considerably with process conditions. 

Photoresists and electron-beam resists play an important role in the manufacture of very large-scale integrated circuits 116). Owing to the following radiation-degradable behavior, aliphatic polyacetylenes might become a new material applicable to electron-beam resists. 

P3-23b Chemical vapor deposition (C VD) is a process used in the microelectronics industry to deposit thin films of constant thickness on sihcon wafers. This process is of particular importance in the manufacturing of very large scale integrated circuits. One of the common coatings is SijN, which is produced according to the reaction... 

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