Etching, ion

Ultramicrotomy is sometimes also used to produce thin samples of solid materials, such as metals [13] which are, however, preferentially prepared by chemical- or ion-etching (see [1]) and focused ion beam (FIB) teclmiques [14]. 

Janes J 1993 Mass seiected ion anguiar impact energy distributions at the powered eiectrode in CF reactive-ion etching J. Appl. Phys. 74 659-67... 

Figure C2.18.2. Schematic representations of various experimentai configurations for piasma etching, (a) Reactive ion etching (RIE). (b) Eiectron cyciotron resonance etching (ECR). (c) Chemicaiiy assisted ion beam etching (CAIBE). The configurations are described in tire text.

Barone M E and Graves D B 1995 Molecular dynamics simulations of direct reactive ion etching of silicon by fluorine and chlorine J. Appi. Phys. 78 6604-15... 

Hanson D E, Voter A F and Kress J D 1997 Molecular dynamics simulation of reactive Ion etching of SI by energetic Cl Ions J. Appl. Phys. 82 3552-9... 

Reactive extrusion Reactive groups Reactive ion etching (RIE)... 

Finally, the metallisation layer usually requires patterning, which can be done by reactive ion etching (RIE) or back-sputtering. The two processes are similar. In both techniques accelerated ions hit the substrate and forcibly detach atoms or molecules from the surface. RIE uses reactive gases such as chlorine, Cl or trichlorofluoromethane [75-69-4] CCl E. Inert gases such as argon or neon are used in back-sputtering. 

RIE = reactive ion etching ECR = electron cyclotron resonance etching. 

Modulation Spectroscopy can be very usefiil in evaluating strains induced by growth (lattice-mismatched systems) or processing procedures, such as reactive-ion etching or oxide formation. The size and magnitude of the strain can be evaluated from the shifrs and splitdngs of various spectral lines, such as. ) or... 

The sputtering process is frequendy used in both the processing (e.g., ion etching) and characterization of materials. Many materials develop nonuniformities, such as cones and ridges, under ion bombardment. Polycrystalline materials, in particular, have grains and grain boundaries that can sputter at different rates. Impurities can also influence the formation of surface topography. ... 

Type of adhesion diffusion ion etching metallic bond... 

According to the international technology roadmap for semiconductors, chips with a wafer diameter of450 mm and a feature size of 0.05 /xm by 2011 will serve to decrease manufacturing costs [29]. In the integrated circuit (IC) manufacture process as shown in Fig. 21 [30], dielectric stacks have been formed by the ion etching on the coating of dielectric material formed on the silicon surface (Fig. 21 (a)). 

Synthesis of nanodot arrays using self-assembled niobium oxide nanopillar mask by reactive ion etching... 

In this report, the fabrication of Si nanodot arrays using niobium oxide nanopillars as an etching mask was performed by an inductively coupled plasma reactive ion etching (ICPRIE). 

Inductively coupled plasma reactive ion etching of Co2MnSi magnetic Aims for magnetic random access memory... 

In this study, the reactive ion etching of Co2MnSi magnetic films with TiN hard mask was investigated in an inductively coupled plasma (ICP) of a Cl2/02/Ar gas mix. The effects of gas concentration on etch characteristics of Co2MnSi films were explored. 

Physical vapor deposition Electron-beam evaporation Electroplating Reactive ion etching Wet etching Molecular beam epitajty Chemical-mechanical polishing Rapid thermal processing Vacuum sealing... 

Includes Plasma or reactive ion etch Dry or wet strip or doth. 

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