Ion etch conditions

Figure 10. Structure of carbon mounds after ion etching. Conditions a, 1,325 jiA min b, 12,325 min. White markers show position of interface.

The plasma etch rates of nanocomposites, consisting of PMMA resists, impregnated with Ceo fullerenes, were compared with those of commercially available resists. " Fullerenes were found to be successful at improving the etch resistance under CF4 and CI2 reactive ion etch conditions. The basic idea of this concept is the reduction of free volume in the polymer resist film. This then results in improved mechanical and etch resistance. 

Figure 1(a) shows the etch rates of niobium oxide pillar and Si film, and the etch selectivity of Si to niobium oxide as a function of CI2 concentration. The etch condition was fixed at coil rf power of 500 W, dc-bias to substrate to 300 V and gas pressure of 5 mTorr. As the CI2 concentration increased, the etch rate of niobium oxide pillar gradually decreased while Si etch rate increased. It indicates that the etch mechanism of niobium oxide in Cl2/Ar gas is mainly physical sputtering. As a result, the etch selectivity of Si film to niobium oxide monotonously increased. The effect of coil rf power on the etch rate and etch selectivity was examined as shown in Fig. 1(b). As the coil rf power increased, the etch rates of niobium oxide and Si increased but the etch rate of niobium oxide showed greater increase than that of Si. It is attributed to the increase of ion density with increasing coil rf power. Figure 1 (c)... 

Oxygen radicals, 9 371 Oxygen reactive ion etch (RIE) conditions, 45 188... 

The O2 RIE was conducted with a RF Plasma Products Inc. reactive ion etcher. Typical etching conditions were bias voltage of -375 to -400V, 10-13 seem of O2, 10-15 mtorr pressure and 25-35 W power. 

Irradiation of heavy ions like An and Kr deposits a heavy damage along the ion track in polymer films. When some polymer films are irradiated with heavy ions and dipped in an alkaline aqueous solution, micropores are produced along the ion track. Since the shape and size of pores of polymers can be controlled by etching conditions and by the species of heavy ions, these polymer films are expected to be used for high-performance filters and ion detectors [92]. The development of the polymer filters and ion detectors are described as follows. 

Reactions Under Ion-Shielding Conditions. Fluorine-containing plasmas are known to cause etching in both organic and inorganic systems (8, , 22., case of hydrocarbon... 

Reactive-ion etch resistance was evaluated using a Cook Vacuum Products RIE system. Model C71-3 operating at 13.56 MHz. The etch resistance was determined for a two-layer configuration in which the resist was spun on 1.5 m of a polyester planarizing layer (PC-1) supplied by Futurrex Inc. The latter etches approx. 30-50% faster than HPR-204 ( 1500 A/min compared to 1000 A/min for HPR). The etching conditions were Power 0.16 W/cm Bias —350 V Pressure, 20 mTorr O2 Flow rate 15 seem O2. 

Etch resistance for 12 organosilicon polymers has been studied under oxygen ion-beam etching (O2-IBE) and oxygen reactive ion etching (02-RIE) conditions. Under O2-IBE conditions, the etching rate for organosilicon polymers is found to be proportional to N/Nsi, where N and Nsi denote the number of total atoms in a monomer unit and the number of silicon atoms in a monomer unit, respectively. This means... 

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