Polyferrocenyldimethylsilane as Reactive Ion Etch Barrier

From the Auger electron spectroscopy (AES) depth profile (Fig. 2), it can be seen that relatively less carbon and a significant amount of oxygen is present at the surface. Furthermore, a higher intensity of iron and an equal amount of silicon compared to the bulk of the film were measured. Compared with XPS observations, it was clear that an Fe-Si xide layer was formed at the exposed surface. The thickness of this oxide layer is approximately lOnm. 

Radiofrequency discharges in low-pressure fluorocarbon gases are often used for etching silicon, silicon oxide, and sihcon nitride. The gas mixtures are 

Since the potential of polyferrocenyldimethylsilane as an etch barrier has been demonstrated above, we now want to focus on pathways to generate patterns of these polymers. Masking layers with such high etching resistance are potentially useful for very thin resist layer appUcations thin layers that prevent pattern collapse when fabricating high-aspect-ratio structures. 

Printing of high-etch-resistance polymers is an attractive economic alternative for the fabrication of lithographic masks. Microcontact printing is a frequently used 

The limited use of macromolecular inks can be attributed to poor wetting characteristics of PDMS surfaces by many polymers. A variety of approaches exist for patterning macromolecules on substrates using microcontact printing methods. 

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