Ion sputter etching

FIGURE 21-10 Schematic representation of the simultaneous use of ion sputter etching and Auger spectroscopy for determining depth profiles. (Courtesy of Physical Electronics. USA, Chanhassen. MN.)... 

Smface analysis has provided the basis of om knowledge of the duplex nature of the passive film formed on austerritic stainless steels. Destructive depth profiling using inert gas ion sputter etching and nondestmctive variable-angle electron spectroscopy ate cotnmotrly used to probe the composition of these layers. Both types of analysis will be illustrated. 

Uses. The chemical inertness, thermal stability, low toxicity, and nonflammability of PFCs coupled with their unusual physical properties suggest many useflil applications. However, the high cost of raw materials and manufacture has limited commercial production to a few, small-volume products. Carbon tetrafluoride and hexafluoroethane are used for plasma, ion-beam, or sputter etching of semiconductor devices (17) (see loN implantation). Hexafluoroethane and octafluoropropane have some applications as dielectric gases, and perfluorocyclobutane is used in minor amounts as a dielectric fluid. Perfluoro-1,3-dimethyl cyclohexane is used as an inert, immersion coolant for electronic equipment, and perfluoro-2-methyldecatin is used for... 

The talk will briefly review some of these developments ranging from high temperature equilibrium plasmas to cool plasmas, PECVD, ion implantation, ion beam mixing and ion assisted etching and deposition. Brief consideration will also be given to sputtering and ionised cluster beam deposition techniques in inorganic synthesis. 

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. 

An example of the ability of atomic hydrogen to passivate the electrically active damage created by Ar2+ ion beam (6 keV) bombardment of n-type (N = 1.5 x 1016 cm-3) Ge is shown in Fig. 8. In this case the Ge was sputter etched for 10 min. at 24°C or 100°C and the spectrum recorded using an evaporated Au Schottky contact. The damage created by the sputtering caused the rather broad peak of Fig. 8(i), which was unaffected by a 30 min. anneal at 200°C in molecular hydrogen. Heating in atomic... 

In ion milling systems (143-145) a confined plasma is used to generate ions. A set of grids used for confinement is biased so that an ion beam can be extracted from the source. This beam is then directed to the substrate surface, where sputter etching or ion milling takes place. 

Extensive (Sample on Target Electrode) Sputter Etching Reactive Sputter Etching Reactive Sputter Etching Reactive Ion Etching... 

Fig. 3.1. Plasma etching systems, a and b Barrel system with etch tunnel, c Planar system, d Planar system (reactive ion etching or reactive sputter etching mode), e Downstream system...

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