Reactive ion etched

Janes J 1993 Mass seiected ion anguiar impact energy distributions at the powered eiectrode in CF reactive-ion etching J. Appl. Phys. 74 659-67... 

Figure C2.18.2. Schematic representations of various experimentai configurations for piasma etching, (a) Reactive ion etching (RIE). (b) Eiectron cyciotron resonance etching (ECR). (c) Chemicaiiy assisted ion beam etching (CAIBE). The configurations are described in tire text.

Barone M E and Graves D B 1995 Molecular dynamics simulations of direct reactive ion etching of silicon by fluorine and chlorine J. Appi. Phys. 78 6604-15... 

Hanson D E, Voter A F and Kress J D 1997 Molecular dynamics simulation of reactive Ion etching of SI by energetic Cl Ions J. Appl. Phys. 82 3552-9... 

Reactive extrusion Reactive groups Reactive ion etching (RIE)... 

Finally, the metallisation layer usually requires patterning, which can be done by reactive ion etching (RIE) or back-sputtering. The two processes are similar. In both techniques accelerated ions hit the substrate and forcibly detach atoms or molecules from the surface. RIE uses reactive gases such as chlorine, Cl or trichlorofluoromethane [75-69-4] CCl E. Inert gases such as argon or neon are used in back-sputtering. 

RIE = reactive ion etching ECR = electron cyclotron resonance etching. 

Modulation Spectroscopy can be very usefiil in evaluating strains induced by growth (lattice-mismatched systems) or processing procedures, such as reactive-ion etching or oxide formation. The size and magnitude of the strain can be evaluated from the shifrs and splitdngs of various spectral lines, such as. ) or... 

Synthesis of nanodot arrays using self-assembled niobium oxide nanopillar mask by reactive ion etching... 

In this report, the fabrication of Si nanodot arrays using niobium oxide nanopillars as an etching mask was performed by an inductively coupled plasma reactive ion etching (ICPRIE). 

Inductively coupled plasma reactive ion etching of Co2MnSi magnetic Aims for magnetic random access memory... 

In this study, the reactive ion etching of Co2MnSi magnetic films with TiN hard mask was investigated in an inductively coupled plasma (ICP) of a Cl2/02/Ar gas mix. The effects of gas concentration on etch characteristics of Co2MnSi films were explored. 

Physical vapor deposition Electron-beam evaporation Electroplating Reactive ion etching Wet etching Molecular beam epitajty Chemical-mechanical polishing Rapid thermal processing Vacuum sealing... 

Includes Plasma or reactive ion etch Dry or wet strip or doth. 

Fabrication was done by photolithography and deep reactive ion etching (DRIB). The catalyst was inserted by sputtering. Such a prepared microstructure was sealed with a Pyrex cover. The bonded micro device was placed on a heating block containing four cartridge heaters. Five thermocouples monitored temperature on the back side. A stainless-steel clamp compressed the device with graphite sheets. 

One way to fabricate such a reactor is by deep reactive ion etching (DRIE) with a time-multiplexed inductively coupled plasma etcher (most details on fabrication are given in [77]) [7, 77, 78]. Regions of major importance such as the retainers are etched through to avoid differences in stmctural depth which may cause uneven flow. To generate various channel depths in one design, both front-side and back-... 

The whole system is constructed from two silicon wafers, fabricated using photoresist by deep reactive ion etching (DRIB) [21]. The wafers were thermally bonded. Thereafter, inlet and outlet ports were machined and the single reactors isolated by DRIB. 

The device was realized by deep reactive ion etching (DRIE) using the SU-8 technique, producing vertical side walls [72-74]. This fabrication route was chosen to avoid crystallization, which is known to occur at sharp channel edges. Using DRIE smooth, curved corners can be realized, unlike by conventional silicon wet etching. 

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