Reactive ion etching rates

The 02 reactive ion etching rates of poly(disilanylenephenylene) 10 and 11, and polyimide (PIQ) were measured. As can be seen in Figure 4, the polymers 10 and 11 show very high etching resistance against the oxygen plasma, compared with the PIQ. 

TABLE 57.20. Reactive ion etch rates and seiectivity of 157 nm photoresistpoiymers [27],... 

Table L Reactive Ion Etching Rates for Various Negative Resist Materials Based on Work by Hiraoka (6) (-250 V Bias,...

Resist reactive-ion etching (RIE) was performed with a totally modified Tegal Model 400 plasma reactor. Ion-milling (IM) was accomplished with a Veeco three inch system. All resist RIE and IM etch rates are measured versus the rate of Si02 and PMMA as outlined above. 

The hydrogen was introduced both as an additive gas (CF, —mixtures) and intramolecularly by using CHFj as the etch gas. This concept has been extended by several groups and impressive SiOj-to-Si etch-rate ratios have been obtained. Ephrath , for example, using CF —mixtures in a reactive-ion etching system has observed ratios of 30 1. An example of this work is shown in Fig. 3.2. Lehmann and Widmer using CHFj gas also in a reactive ion etching mode have obtained ratios of 15 1. We have previously shown that mixtures of CF, and CjF behave similarly to CF —Hj mixtures with respect to the SiOj-to-Si etch-rate ratio. 

Fig, 3.2. Etch rates of SIO and Si as a function of molecular percentage of hydrogen added to CF in a reactive ion etching system (data from Ref. )... 

Figure 6. Polymer etching rates in CF4 reactive ion etching 0.21 W/cm2 R.F. power density, 4 x 10-4 Torr, -500 V bias potential. The thickness loss is shown in the unit of 1.6 x 10-6 m.

R R Re reff RIE RNG Gas constant Radius of curvature Reynolds number Measured reaction rate Reactive ion etching ReNormalization Group... 

Reactive Ion Etching. Etching experiments were carried out in an Applied Materials Model 8110 Hex reactor. Alternatively, a Cook Vacuum Products Inc. Model C71 RF/DC Sputtering Module was employed. Film thickness measurements were taken before and after etching to determine etching rates, and the rates were typically compared to that of the novolac-diazoquinone photoresist, HPR-206, baked at 210 C for 1 hour. Measurements were obtained on a Dektak Model IIA profilometer. 

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