Reactive ion beam etching RIBE

Reactive fibers, 9 486-489 Reactive flame retardants, 11 474-479 brominated, ll 475-477t Reactive gases, 13 456 Reactive groups, types of, 9 178 Reactive hot melt butyl sealants, 22 44 Reactive hot melt polyurethanes, 22 37-38 Reactive hot melt silicones, 22 35 Reactive ion-beam etching (RIBE), 22 184 Reactive ion etching (RIE), 20 278 22 183 of lotus effect surfaces, 22 120 Reactive lead alloys, 14 779 Reactive liquid metal infiltration process, 16 168... 

Reactive ion beam etching (RIBE) is similar to ion beam etching but with reactive ions. The etching profile depends on the special conditions, the selectivity is lower than in ion beam etching. 

In reactive ion-beam etching (RIBE), the inert gas is replaced completely by a chemically reactive gas, so the sample is bombarded with a stream of ions that have a strong interaction with the substrate, and material removal can be very rapid. However, instrument corrosion can be a major concern. The ion gun, milling chamber, and pumping system are all exposed to large quantities of reactive gases and are prone to degradation. 

Photoluminescence (PL) and lasing were excited by the radiation of a N2 laser (/ v = 3.68eV, /exc = 10 -10 W/cm, /= 1000 Hz, tp = 8ns), a HeCd laser (/zv = 3.81 eV) and by radiation of a dye laser with frequency tuning for direct excitation of the quantum wells. The electroluminescence was excited by voltage imposed to the ELT samples by stripe contacts. Reactive ion beam etching (RIBE, Ar+02) was used for the formation of the contacts on the n-type region of the device and for removing of a part of the cap layer. 

Dry etching processes can be based on purely mechanical removal of material by ion impact (physical or sputter etching (PE) and ion beam etching (IBE)) or on the removal of material by very reactive gases or plasmas (plasma etching) or by combinations of both process types (reactive ion etching (RIE), reactive ion beam etching (RIBE), or chemical-assisted ion beam... 

Ion beam etching (IBE also known as ion miUing) relies on energetic (argon) ions and differs thus from RIE. Chemically active species are absent in ion beam etching, and etch product volatility is not an issue. IBE rates are very low compared to RIE, only 20-100 rnn/min. Reactive ion beam etching (RIBE) uses reactive ions, e.g., fluorine or chlorine, but the etching mechanism is... 

Reactive ion beam etching (RIBE) (cleaning) Chemical etching of a surface under bombardment by a reactive ion beam from an ion source that is usually collimated and often monoenergetic. 

RIE MERIE ICP RIBE ECR CAIBE Reactive ion etching Magnetically enhanced reactive ion etching Inductively coupled plasma Reactive ion beam etching Electron cyclotron resonance Chemically assisted ion beam etching Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical... 

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