Ion beam etching

Ultramicrotomy is sometimes also used to produce thin samples of solid materials, such as metals [13] which are, however, preferentially prepared by chemical- or ion-etching (see [1]) and focused ion beam (FIB) teclmiques [14]. 

Figure C2.18.2. Schematic representations of various experimentai configurations for piasma etching, (a) Reactive ion etching (RIE). (b) Eiectron cyciotron resonance etching (ECR). (c) Chemicaiiy assisted ion beam etching (CAIBE). The configurations are described in tire text.

Zalm P C 1986 Ion-beam assisted etching of semiconductors Vacuum 36 787-97... 

Uses. The chemical inertness, thermal stability, low toxicity, and nonflammability of PFCs coupled with their unusual physical properties suggest many useflil applications. However, the high cost of raw materials and manufacture has limited commercial production to a few, small-volume products. Carbon tetrafluoride and hexafluoroethane are used for plasma, ion-beam, or sputter etching of semiconductor devices (17) (see loN implantation). Hexafluoroethane and octafluoropropane have some applications as dielectric gases, and perfluorocyclobutane is used in minor amounts as a dielectric fluid. Perfluoro-1,3-dimethyl cyclohexane is used as an inert, immersion coolant for electronic equipment, and perfluoro-2-methyldecatin is used for... 

Physical vapor deposition Electron-beam evaporation Electroplating Reactive ion etching Wet etching Molecular beam epitajty Chemical-mechanical polishing Rapid thermal processing Vacuum sealing... 

The talk will briefly review some of these developments ranging from high temperature equilibrium plasmas to cool plasmas, PECVD, ion implantation, ion beam mixing and ion assisted etching and deposition. Brief consideration will also be given to sputtering and ionised cluster beam deposition techniques in inorganic synthesis. 

Chemically assisted reactive ion beam etching (CAIBE)... 

Ion-Assisted Processes An alternative use of ion beams generated from low cost sources is to assist particular chemical reactions, or vapour deposition. An example here is in etching processes (Figure 16). The simultaneous use of an argon beam with XeFp gas compared with the use of either separately, to etch silicon produces an etch rate of a factor of at least fourteen. The use of ion beams can also increase the directionality (23) of the process (Figure 17). Examples are given in Table IV of how ion bombardment during film formation modifies the final film. 

Figure 16. The influence of Ar ion beams on the etch rate of silicon by XeF2 ...

Figure 17. The influence of gaseous XeF on the ion beam etching profiles of silicon.

X.J. Zhang, B. Ogorevc, and J. Wang, Solid-state pH nanoelectrode based on polyaniline thin film elec-trodeposited onto ion-beam etched carbon fiber. Anal. Chim. Acta 452, 1-10 (2002). 

An example of the ability of atomic hydrogen to passivate the electrically active damage created by Ar2+ ion beam (6 keV) bombardment of n-type (N = 1.5 x 1016 cm-3) Ge is shown in Fig. 8. In this case the Ge was sputter etched for 10 min. at 24°C or 100°C and the spectrum recorded using an evaporated Au Schottky contact. The damage created by the sputtering caused the rather broad peak of Fig. 8(i), which was unaffected by a 30 min. anneal at 200°C in molecular hydrogen. Heating in atomic... 

Reactive fibers, 9 486-489 Reactive flame retardants, 11 474-479 brominated, ll 475-477t Reactive gases, 13 456 Reactive groups, types of, 9 178 Reactive hot melt butyl sealants, 22 44 Reactive hot melt polyurethanes, 22 37-38 Reactive hot melt silicones, 22 35 Reactive ion-beam etching (RIBE), 22 184 Reactive ion etching (RIE), 20 278 22 183 of lotus effect surfaces, 22 120 Reactive lead alloys, 14 779 Reactive liquid metal infiltration process, 16 168... 

High resolution negative resists are needed for masked ion beam lithography (MIBL) and for the fabrication of MIBL masks by E-beam lithography (EBL). The MOTSS copolymer resists were developed to obtain the resolution of fine features that a bilevel resist can best provide. The flexibility afforded by choosing the structure of the HS, the copolymer composition, and the molecular weight allows a resist to be tailored by simple synthesis adjustments to have the particular sensitivity and etch protection which best suits the application. 

---