Rapid thermal processing

Fair, R.B. (editor) (1993) Rapid Thermal Processing (Academic Press, San Diego). 

The Cluster Tool Concept. A recent trend in semiconductor equipment is the integration of two or more functions, such as CVD, PVD, etching, stripping, or rapid thermal processing, in one piece of equipment the so-called cluster tool. A continuous vacuum can be maintained, a feature which reduces the handling and contamination problems, increases the overall throughput, improves the process control, and generally lowers the cost. 

Physical vapor deposition Electron-beam evaporation Electroplating Reactive ion etching Wet etching Molecular beam epitajty Chemical-mechanical polishing Rapid thermal processing Vacuum sealing... 

The rapid thermal processing (RTP) of the company Ensyn Group Inc., situated in Ottawa (Canada). Diverse working process plants for the production of biobased aromates are available of which the largest has a biomass processing capacity of 70 t/day. The heart of the process is a CFB reactor. 

Rapid thermal processing Special Report on Emission Scenarios Solid oxide fuel cell Shell coal gasification process Technical University... 

Rapid Thermal Decomposition of Solutions (RTDS) process, 6 850 Rapid thermal processing sintering ceramics processing, 5 663 Rare-earth alloys, 23 262 economic aspects of, 74 645 Rare earth aluminosilicate (REAS) glass microspheres, 72 612... 

The primary devolatilization of coal is a very rapid, thermal process and therefore not strongly sensitive to solid residence... 

A.A. Naem. Platinum silicide formation using rapid thermal processing // J.Appl. Phys.- 1988.- V.64, No.8.- P.4161-4167. 

A.K. Pant, S.P. Murarka, C. Shepard, W. Lanford. Kinetics of platinum silicide formation during rapid thermal processing // J.Appl.Phys.- 1992.- V.72, No.5.- P.1833-1836. 

Thermal Drift or Slow Heat Evolution. Evidence for Very Narrow Pores. For the initial increments of curve a for nitrogen on the bare surface of bone mineral at —195° (V/Vm < 0.05), the observed time-temperature curves were normal, exhibiting no evidence for any slow heat evolution, and the same was true for increments at V/Vm > 0.4, as well as for all points represented in curves b and c. However, for increments of curve a in the region V/Vm = 0.05 to 0.4, heat continued to be liberated for some time after the initial rapid thermal process. For different nitrogen increments within this range of coverage the heat produced in this slow process was from 5 to 12% in excess of that instantaneously evolved. The slow process was observed over a period of 20 to 30 minutes. In one extreme case it was still not complete after 45 minutes, which was about the maximum practicable period for observation. 

RTP [Rapid Thermal Processing] A process for converting heavy petroleum oil and bitumen to less viscous liquids, which are easier to pump through long-distance pipelines. Developed by Ensyn Petroleum Canada and proposed to be piloted in Alberta in 2002. 

In general, several possible chemical reactions can occur in a CVD process, some of which are thermal decomposition (or pyrolysis), reduction, hydrolysis, oxidation, carburization, nitridization and polymerization. All of these can be activated by numerous methods such as thermal, plasma assisted, laser, photoassisted, rapid thermal processing assisted, and focussed ion or electron beams. Correspondingly, the CVD processes are termed, thermal CVD, plasma assisted CVD, laser CVD and so on. Among these, thermal and plasma assisted CVD techniques are widely used, although polymer CVD by other techniques has been reported. ... 

Graham, R. G., and Huffman, D. R. (1995). Commercial Aspects of Rapid Thermal Processing (RTpTM) Pape, presented at Power Production from Biomass II, March 27-28, 1995, Espoo, Finland. 

Beckman, D., Pyrolysis Power Plant Using Rapid Theimal Processing and a Steam Turbine, and Bio-oil Production Plant Using Rapid Thermal Processing, Volume 3, lEA Bioenergy Techno-economic analysis activity, VTT Research Notes 1961, Espoo Finland, 1999. 

A lamp (such as those used in rapid thermal processing) is used to heat the surface radiatively. 

Holliday, S. and Stanishevsky, A. (2004) Crystallization of CaTiOj by sol-gel synthesis and rapid thermal processing. Surf. Coat. Technol., 188/189, 741-744. 

F. Roozeboom and N. Parekh, Rapid Thermal Processing Systems A Review with Emphasis on Temperature Control, / Vac. Sci. Technol. B., 8, pp. 1249-1259,1990. 

F. Roozeboom, Rapid Thermal Processing Status, Problems and Options after the First 25 Years, in J. C. Gelpy et al. (eds.), Rapid Thermal and Integrated Processing II, 303, pp. 149-164, Materials Research Society Symposium Proceedings, MRS, Pittsburgh, 1993. 

A new method of forming Ge nanocrystals in Si02 based on molecular-beam epitaxy combined with rapid-thermal processing is presented. We demonstrate that the method allows the formation of a high aerial density ( 5xl0 dots/cm ) of small spherical dots ( 4nm in diameter) of a narrow size distribution located at a controlled and well-defined distance from the Si/Si02 interface, and that these dots show a significant memory effect. 

In the present work we will discuss a new growth technique of Ge nanocrystals in Si02 which we have developed recently, based on molecular-beam epitaxy (MBE) combined with rapid-thermal processing (RTF). The grown structures have undergone very detailed structural charaterizations and are at the moment in the process of being electrically characterized. 

RAPID THERMAL PROCESSING OF POROUS SILICON FOR THE STRUCTURE STABILIZATION... 

A number of studies has been attempted to stabilize porous silicon low-temperature oxidation in a controlled way [1-3], surface modification of silicon nanocrystallites by chemical [4] or electrochemical [5] procedures etc. Rapid thermal processing (RTP) is thought to be a shortcut method of the PS stabilization for a number of purposes. However, there is no data about RTP influence on the PS structure. Therefore, the study of lattice deformations of PS layers after RTP is of great interest. In the present work. X-ray double-crystal diffractometry was used to measure lattice deformations of PS after RTP of millisecond and second durations. 

V. E. Borisenko, P. J. Hesketh, Rapid Thermal Processing of Semiconductors (Plenum Press, New York, 1997) 358. 

A p-type, lO cm boron doped, (lOO)-oriented monocrystalline Si wafer was subjected to anosotropic chemical etching in 10% KOH at 80°C for 5-30 min to produce inverted 1.0-1.5 pm pyramids at the period of 1.5-2.0 pm. The pyramidal-film textured surface was transformed into a 1.5 pm thick PS layer by anodising in the aqueous 12% HF solution at the current density of 30 mA/cm. Phosphorus ions were implanted through the PS layer at 50 keV, 6-10 cm. A subsequent rapid thermal processing at 1000°C for 30 s formed shallow n -p jimction at the interface between the PS layer and the Si substrate. 

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