Deep reactive ion etching, DRIE

One way to fabricate such a reactor is by deep reactive ion etching (DRIE) with a time-multiplexed inductively coupled plasma etcher (most details on fabrication are given in [77]) [7, 77, 78]. Regions of major importance such as the retainers are etched through to avoid differences in stmctural depth which may cause uneven flow. To generate various channel depths in one design, both front-side and back-... 

The device was realized by deep reactive ion etching (DRIE) using the SU-8 technique, producing vertical side walls [72-74]. This fabrication route was chosen to avoid crystallization, which is known to occur at sharp channel edges. Using DRIE smooth, curved corners can be realized, unlike by conventional silicon wet etching. 

The most important process in the fabrication of silicon hollow fibers is deep reactive ion etching (DRIE). This process is very similar to the standard reactive ion etching (RIE) [ 122] process but permits us to achieve perfect vertical structures with low roughness. The results shown in Figs. 12 and 13 clearly confirm the required verticality of the walls to assure good confinement can be achieved. 

The micro mixer was fabricated from two plates by standard MEMS technology, using deep reactive ion etching (DRIE) [48]. Anodic bonding is used for sealing the plates. 

Later, Pattekar and Kothare [21] presented a silicon reactor fabricated by deep reactive ion etching (DRIE). It carried seven parallel micro channels of 400 pm depth and 1 000 pm width filled with commercial Cu/ZnO catalyst particles (from Siid-Chemie) trapped by a 20 pm filter, which also was made by DRIE, in the reactor. The reactor was covered by a Pyrex wafer applying anodic bonding. Details of the reactor are shown in Figure 2.3. 

The reactor could be heated to 900 °C by applying these elements. The fabrication of the device was performed by deep reactive ion etching (DRIE) or KOH etching combined with silicon fusion bonding. 

Si02 Buffert hydrofluoric acid, RIE Dry etching, deep reactive ion etching DRIE Thermische thermal oxidation, low-pressure chemical vapor deposition Crystallographic and wet chemical etching of silicon... 

The devices are constructed from two plates, which are irreversibly joined by anodic bonding. M icrofabrication was achieved by means of deep reactive ion etching (DRIE) in borosilicate glass. 

Reactive ion etching (RIE) and deep reactive ion etching (DRIE) are common examples of plasma etching. In this incarnation, the substrate to be etched is placed on a powered electrode in a plasma chamber. Process gases are admitted into the chamber and a plasma is struck. Because the substrate is directly in the ion flux of the plasma, the ions impinge on the surface and may participate in chemistry. For example, RIE of polysilicon may use SFs as the reactive gas, and etches the Si by a reaction with fluoride ions fo form fhe volatile product SiF4, as illustrated by Eqs. (4) and (5). ... 

The substrate is 425 tm thick (see Note 5). The cantilevers were fabricated in separate cavities with a pitch of 250 tm between them. The cavities are the through-wafer holes drilled using a deep reactive ion etching (DRIE) technique. Each cantilever was 40 pm wide and 200 pm long, the thickness of each cantilever was 334nm (which was fixed by the thickness of the structural layer) (see Note 6). 

Bosch process Deep reactive-ion etching (DRIE) Etching single crystalline materials Physical-chemical etching Potassium hydroxide (KOH) etching Silicon etching... 

The deep reactive ion etching (DRIE) technique, first presented in the mid- to late 1990s, facilitated the fabrication of numerous innovative microsystems, especially power-MEMS systems. Since most MEMS devices involve some form of... 

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