Chemically assisted ion beam etching

A technique that combines both physical and chemical etching mechanisms is chemically assisted ion beam etching (CAIBE). In CAIBE, an inert gas ion beam is directed at a sample which is situated in a... 

RIE MERIE ICP RIBE ECR CAIBE Reactive ion etching Magnetically enhanced reactive ion etching Inductively coupled plasma Reactive ion beam etching Electron cyclotron resonance Chemically assisted ion beam etching Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical Chemical-physical... 

Figure C2.18.2. Schematic representations of various experimental configurations for plasma etching, (a) Reactive ion etching (RIE). (b) Electron cyclotron resonance etching (ECR). (c) Chemically assisted ion beam etching (CAIBE). The configurations are described in the text.

Dienelt, 1., Zimmer, K., von Sonntag, 1., Rauschenbach, B., and C. Bundesmann. 2005. Roughness and damage of a GaAs surface after chemically assisted ion beam etching with Cl2/Ar. Microelectronic Engineering 78-79 457-463. 

I. Adesida, A.T. Ping, C. Youtsey, T. Dow, M. Asif Khan, D.T. Olsen, J.N. Kuznia, Characteristics of chemically assisted ion beam etching of gallium nitride, Appl. Phys. Lett. 65 (1994) 889-891. 

Dry etching processes can be based on purely mechanical removal of material by ion impact (physical or sputter etching (PE) and ion beam etching (IBE)) or on the removal of material by very reactive gases or plasmas (plasma etching) or by combinations of both process types (reactive ion etching (RIE), reactive ion beam etching (RIBE), or chemical-assisted ion beam... 

Chemically assisted reactive ion beam etching (CAIBE)... 

Kawabata, Y, Taniguchi, J., and I. Miyamoto. 2004. XPS studies on damage evaluation of single-crystal diamond chips processed with ion beam etching and reactive ion beam assisted chemical etching. Diamond and Related Materials 13 93-98. 

Ion-Assisted Processes An alternative use of ion beams generated from low cost sources is to assist particular chemical reactions, or vapour deposition. An example here is in etching processes (Figure 16). The simultaneous use of an argon beam with XeFp gas compared with the use of either separately, to etch silicon produces an etch rate of a factor of at least fourteen. The use of ion beams can also increase the directionality (23) of the process (Figure 17). Examples are given in Table IV of how ion bombardment during film formation modifies the final film. 

Chattopadhyay S, Bohn PW (2004) Direct-write patterning of microstructured porous silicon arrays by focused-ion-beam Pt deposition and metal-assisted electroless etching. J Appl Phys 96 6888 Chattopadhyay S, Bohn PW (2006) Surfactant-induced modulation of light emission in porous silicon produced by metal-assisted electroless etching. Anal Chem 78(17) 6058-6064 Chattopadhyay S, Li X, Bohn PW (2002) In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching. J Appl Phys 91 6134-6140... 

---