Oxygen reactive ion etch

Oxygen radicals, 9 371 Oxygen reactive ion etch (RIE) conditions, 45 188... 

OXYGEN REACTIVE ION ETCHING (RIE) OF NOVOLAC-SILOXANE BLOCK COPOLYMERS... 

From these observations, a photooxidative scheme has been developed in which a hydrophobic resist becomes hydrophilic upon oxidation induced by deep UV (248 and 193 nm) radiation. Subsequent treatment with TiCLi followed by oxygen reactive ion etching then affords high-resolution, negative-tone patterns. Studies are currently underway to minimize the line edge roughness and background residue present in such patterns. 

Quantitative Analysis of a Laser Interferometer Waveform Obtained During Oxygen Reactive-Ion Etching of Thin Polymer Films... 

Two general types of multilayer process may be distinguished, depending on whether they use oxygen reactive ion etching (RIE) (4) or optical exposure (5-11) to transfer the pattern into the resist. Optical pattern transfer may suffer from some limitation due to substrate reflections, but has an advantage in the simplicity of the equipment compared to RIE. 

Figure 13 Schematic representation of the bilevel resist process employing an oxygen reactive ion etching pattern transfer technique.

Currently two methods are utilized for transfer of the relief image from the top resist layer to the bottom planarizing layer oxygen reactive ion etching (RIE), and optical flood exposure (1). Oxygen RDE systems have not found widespread acceptance due to the high cost and low throughput of RIE equipment. Optical... 

Etch resistance for 12 organosilicon polymers has been studied under oxygen ion-beam etching (O2-IBE) and oxygen reactive ion etching (02-RIE) conditions. Under O2-IBE conditions, the etching rate for organosilicon polymers is found to be proportional to N/Nsi, where N and Nsi denote the number of total atoms in a monomer unit and the number of silicon atoms in a monomer unit, respectively. This means... 

Patterning of Fine Via Holes in Polyimide by an Oxygen Reactive Ion Etching Method... 

Oxygen reactive-ion etching (O2 RIE) was carried out with a Cooke Vacuum Products (model C71-3) parallel-plate RIE reactor operating at 13.56 MHz. Oxygen pressure and flow rate were 2 Pa and 10 seem (standard cubic centimeters per minute), respectively, and the RF (radio frequency) power density and self-bias were 0.15 W/cm and -350 V, respectively. 

---