Indium phosphides

Rinnen K D, Kolenbramder K D, DeSantolo A M and Mandioh M L 1992 Direst infrared and visible absorption speotrosoopy of stoiohiometrio and nonstoiohiometrio olusters of indium phosphide J. Chem. Phys. 96 4088... 

Xu C, de Beer E, Arnold D W, Arnold C C and Neumark D M 1994 Anion photoeleotron speotrosoopy of small indium phosphide olusters x, y = 1-4) J. Chem. Phys. 101 5406... 

Trentler T J ef a/1997 Solution-liquid-solid growth of indium phosphide fibers from organometallic precursors elucidation of molecular and non-molecular components of the pathway J. Am. Chem. Soc. 119 2172... 

Douglas T and Theopold K H 1991 Molecular precursors for indium phosphide and synthesis of small lll-V semiconductor clusters in solution inorg. Chem. 30 594... 

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

Indium also combines with nonmetaUic elements and with metalloids such as N, P, Sb, As, Te, and Se. Many of the latter compounds ate semiconducting as ate the oxide and sulfide. Indium antimonide [1312-41 -0], InSb indium arsenide [1303-11-3], In As and indium phosphide [22398-80-7], InP, ate the principal semiconducting compounds. These ate all prepared by direct combination of the highly purified elements at elevated temperature under controlled conditions. 

Semiconductors. Phosphine is commonly used in the electronics industry as an -type dopant for siUcon semiconductors (6), and to a lesser extent for the preparation of gaUium—indium—phosphide devices (7). For these end uses, high purity, electronic-grade phosphine is required normally >99.999% pure. The main impurities that occur in phosphine manufactured by the acid process are nitrogen [7727-37-9] hydrogen [1333-74-0] arsine [7784-42-17, carbon dioxide [124-38-9], oxygen [7782-44-7], methane [74-82-8], carbon monoxide [630-08-0], and water [7732-42-1]. Phosphine is purified by distillation under pressure to reduce the level of these compounds to <1 ppm by volume. The final product is sold as CYPURE (Cytec Canada Inc.) phosphine. 

A. Katz, ed.. Indium Phosphide and EelatedMaterials Processing, Technology and Devices, Aitech House, Boston, Mass., 1992. 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

Metallo-organic CVD (MOCVD) is a specialized area of CVD, which is a relatively newcomer, as its first reported use was in the 1960s for the deposition of indium phosphide and indium anti-monide. These early experiments demonstrated that deposition of critical semiconductor materials could be obtained at lower temperature than conventional thermal CVD and that epitaxial growth could be successfully achieved. The quality and complexity of the equipment and the diversity and purity of the precursor chemicals have steadily improved since then and MOCVD is now used on a large scale, particularly in semiconductor and opto-electronic applications.91P1... 

LED materials include gallium arsenic phosphide, gallium aluminum arsenide, gallium phosphide, gallium indium phosphide, and gallium aluminum phosphide. The preferred deposition process is MOCVD, which permits very exacting control of the epitaxial growth and purity. Typical applications of LED s are watches, clocks, scales, calculators, computers, optical transmission devices, and many others. 

Photovoltaic (PV) solar cells, which convert incident solar radiation directly into electrical energy, today represent the most common power source for Earth-orbiting spacecraft, such as the International Space Station, where a photovoltaic engineering testbed (PET) is actually assembled on the express pallet. The solid-state photovoltaics, based on gallium arsenide, indium phosphide, or silicon, prove capable, even if to different extents and with... 

Cachet H, Cortes R, Eroment M, Mamin G (1997) Epitaxial electrodeposition of cadmium selenide thin films on indium phosphide single crystal. J Solid State Electrochem 1 100-107... 

Galliiun Indium Phosphide, GeiInP2 Green and Yellow... 

Metal-Phosphorus Bono Lengths, Torsion Angles between the Metal and Phosphorus Coordination Planes, Sums of Angles at Phosphorus, and 3IP NMR Chemical Shifts for Three-Coordinate Aluminum, Gallium, and Indium Phosphides... 

Iseler, G. W. et al., Int. Conf. Indium Phosphide Relat. Mater., 1992, 266 Reaction of beryllium, copper, manganese, thorium or zirconium is incandescent when heated with phosphorus [1] and that of cerium, lanthanum, neodymium and praseodymium is violent above 400°C [2], Osmium incandesces in phosphorus vapour, and platinum bums vividly below red-heat [3], Red phosphorus shows very variable vapour pressure between batches (not surprising, it is an indeterminate material). This leads to explosions when preparing indium phosphide by reactions involving fusion with phosphorus in a sealed tube [4],... 

Volume 31 Indium Phosphide Crystal Growth and Characterization... 

T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation K. Tada, M. Tatsumi, M. Morioka, T. Araki, and T. Kawase, InP Substrates Production and Quality Control... 

Duan, X. Huang, Y. Cui, Y. Wang, I Lieber, C. M. 2001. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409 66-69. 

Gudiksen, M. S. Wang, J. Lieber, C. M. 2002. Size dependent photoluminescence from single indium phosphide nanowires. J. Phys. Chem B 106 4036 4039. 

Indium hydroxide, 14 197 Indium mines, 14 192-193 Indium oxide, 5 600 14 195, 196 Indium phosphide, 14 197 Indium plating, for microelectronics, 9 813 Indium-point realization, 24 444 Indium tin oxide (ITO), 7 530 14 196-197 24 805... 

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