Oxygen indium phosphide

Semiconductors. Phosphine is commonly used in the electronics industry as an -type dopant for siUcon semiconductors (6), and to a lesser extent for the preparation of gaUium—indium—phosphide devices (7). For these end uses, high purity, electronic-grade phosphine is required normally >99.999% pure. The main impurities that occur in phosphine manufactured by the acid process are nitrogen [7727-37-9] hydrogen [1333-74-0] arsine [7784-42-17, carbon dioxide [124-38-9], oxygen [7782-44-7], methane [74-82-8], carbon monoxide [630-08-0], and water [7732-42-1]. Phosphine is purified by distillation under pressure to reduce the level of these compounds to <1 ppm by volume. The final product is sold as CYPURE (Cytec Canada Inc.) phosphine. 

Bertrand and Fleischer (38) have studied the chemical deposition of silicon dioxide on Indium phosphide. They found that on unoxldlzed, etched surfaces, oxide coverage was "always patchy". If the InP had a monolayer of chemisorbed oxygen, an approximately 60A-thlck oxide film could be formed at room temperature through the formation of Sl-O-P bonds at the Interface. 

Blackmore, G., Clegg, J., Hislop, I, Mullin, J. (1976) Concentrations of carbon and oxygen in indium phosphide and gaUium arsenide crystals grown by the LEC technique. Journal of Electronic Materials, 5,401-413. 

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