Indium phosphide properties

Figure 9.2 Temperature history of a CPMD simulation of InP indicating the melting of the crystal into a liquid and the quenching of the liquid into an amorphous solid. [Reprinted by per mission from L. J. Lewis, A. De Vita, and R. Car, Structure and Electronic Properties of Amorphous Indium Phosphide from First Principles, Phys. Rev. B 57 (1998), 1594 (Copyright 1994 by the American Physical Society).]...

L. J. Lewis, A. De Vita, and R. Car, Structure and Electronic Properties of Amorphous Indium Phosphide from First Principles, Phys. Rev. B 57 (1998), 1594. 

Gunn devices belong to a group called transferred electron oscillators and are the ones most often encountered in MMW spectrometry, as they offer the lowest noise figure. They rely on a bulk property of gallium arsenide and indium phosphide when a DC voltage is applied across the end contacts of the n-type material. As the voltage is increased, the current initially increases linearly and then starts to oscillate, with a period closely related to the transit time of the carriers between the contacts across the bulk material. The device is housed in a cavity coupled to a transmission line and is used as a source of MMW radiation, the frequency of which can be tuned mechanically and electronically. 

Electronic Transport, General Description. Indium Phosphide (InP). The transport properties are determined mainly by the electrons in the Tec minimum. Above 800 K, multivalley conduction, where the Lee minimum is involved, becomes important. 

Roy, S., 8c Springborg, M. (2003). A theoretical study of structural and electronic properties of naked stoichiometric and non-stoichiometric Indium Phosphide clusters. The Journal of Physical Chemistry B, 107, 2771-2779. 

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