Indium antimonide

InSb is an important compound semiconductor of the III-V family for optoelectronic purposes. At room temperature the semiconductor has a direct band gap of 0.17 eV and a high mobility of charge carriers. Similar to GaAs, it was reported that InSb can be directly electrodeposited at 45 °C in the Lewis basic chloroin-date ionic liquid InCl3/l-methyl-3-ethylimidazolium chloride, to which SbCU was 

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The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

Indium also combines with nonmetaUic elements and with metalloids such as N, P, Sb, As, Te, and Se. Many of the latter compounds ate semiconducting as ate the oxide and sulfide. Indium antimonide [1312-41 -0], InSb indium arsenide [1303-11-3], In As and indium phosphide [22398-80-7], InP, ate the principal semiconducting compounds. These ate all prepared by direct combination of the highly purified elements at elevated temperature under controlled conditions. 

Metallic Antimonides. Numerous binary compounds of antimony with metallic elements are known. The most important of these are indium antimonide [1312-41 -0] InSb, gallium antimonide [12064-03-8] GaSb, and aluminum antimonide [25152-52-7] AlSb, which find extensive use as semiconductors. The alkali metal antimonides, such as lithium antimonide [12057-30-6] and sodium antimonide [12058-86-5] do not consist of simple ions. Rather, there is appreciable covalent bonding between the alkali metal and the Sb as well as between pairs of Na atoms. These compounds are useful for the preparation of organoantimony compounds, such as trimethylstibine [594-10-5] (CH2)2Sb, by reaction with an organohalogen compound. 

Indium antimonide Indium sulphate Indium oxide... 

The trimeric indium antimonide single-source precursor [Et2InSb(SiMe3)2]3, prepared from Et2InCl and Sb(SiMe3)3, was shown in a preliminary study to form InSb nanocrystals (average particle size 10 nm) by solid-state thermolysis at 400 °C under a static vacuum. However, the particles were contaminated with elemental indium.399... 

Paul W. Kruse, Indium Antimonide Photoconductive and Photoelectromagnetic Detectors... 

While most other techniques use a limited amount of detectors (e.g., silica for visible, photomultipliers for UV) and MIR has a small number, NIR uses many types of semiconductors for detectors. The original PbS detectors are still one of the largest used in NIR, however, indium gallium arsenide (InGaAs), indium arsenide (InAs), indium antimonide (InSb), and lead selenide (PbSe) are among the semiconductor combinations used, both cooled and ambient. 

RJ. Treado, I.W. Levin and E.N. Lewis, Indium antimonide (InSb) focal plane array (FRA) detection for near-infrared imaging microscopy, Appl Spectrosc., 48(5), 607-615, (1994). 

InSb indium antimonide MER multiple linear regression... 

Indiums low melting point is the major factor in determining its commercial importance. This factor makes it ideal for soldering the lead wires to semiconductors and transistors in the electronics industry. The compounds of indium arsenide, indium antimonide, and indium phosphide are used to construct semiconductors that have specialized functions in the electronics industry. 

Synonyms Indium sesquioxide indium trichloride indium nitrate indium antimonide indium arsenide indium phosphide... 

Indium antimonide is used in semiconductor and Hall effect devices, and infrared detectors. 

Indium antimonide may be synthesized from its elements by fusion of stoichiometric amounts of indium and antimony at elevated temperatures in an evacuated, sealed ampule. 

From the exit slit, the beam is directed to either of two detectors by the movable mirror behind the exit slit. Typical detectors are InSb, a photovoltaic indium antimonide detector operated at 77 K, and He Ge, a photo-conductive mercury-doped germanium detector maintained at 15 K by a closed-cycle helium refrigerator... 

Indium antimonide/Mercury cadmium telluride (InSb/MCT) sandwich. IR filters ... 

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